Datasheet > MBRB1060HE3_A/P

MBRB1060HE3_A/P

更新时间： 2024-01-22 13:09:34

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	147K
描述
DIODE SCHOTTKY 60V 10A TO263AB

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中文翻译

获取价格

数据手册

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MBRB1060HE3_A/P 数据手册

MBR10xx, MBRF10xx, MBRB10xx

www.vishay.com

Vishay General Semiconductor

Schottky Barrier Rectifier

FEATURES

TO-220AC

ITO-220AC

• Power pack

• Low power loss, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 245 °C (for TO-263AB package)

MBR1045

MBR1060

PIN 1

MBRF1045

MBRF1060

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for TO-220AC and ITO-220AC package)

PIN 1

CASE

• AEC-Q101 qualified available

PIN 2

(for ITO-220AC and D²PAK (TO-263AB) package)

D²PAK (TO-263AB)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of switching

mode power supplies, freewheeling diodes, DC/DC

converters, and polarity protection application.

MBRB1045

MBRB1060

PIN 1

MECHANICAL DATA

Case: TO-220AC, ITO-220AC, D²PAK (TO-263AB)

PIN 2

HEATSINK

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified

(“_X” denotes revision code, e.g. A, B, ...)

click logo to get started

DESIGN SUPPORT TOOLS

Models

Available

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

PRIMARY CHARACTERISTICS

I_F(AV)

10 A

Polarity: as marked

V_RRM

I_FSM

45 V, 60 V

150 A

Mounting Torque: 10 in-lbs maximum



V_F

0.57 V, 0.70 V

T_Jmax.

150 °C

Package

Circuit configuration

TO-220AC, ITO-220AC, D²PAK (TO-263AB)

Single

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

I_F(AV)

I_FSM

MBR1045

MBR1060

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load

Peak repetitive reverse current at t_p= 2.0 µs, 1 kHz

Voltage rate of change (rated V_R)

150

V/μs

°C

I_RRM

1.0

0.5

dV/dt

T_J

10 000

-65 to +150

-65 to +175

1500

Operating junction and storage temperature range

T_STG

V_AC

Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min

Revision: 19-Sep-2018

Document Number: 88669

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与MBRB1060HE3_A/P相关器件

型号	品牌	获取价格	描述	数据表
MBRB1060HE3_B/I	VISHAY	获取价格	Rectifier Diode,
MBRB1065CT	CITC	获取价格	10A Surface Mount High Power Schottky Barrier Rectifiers
MBRB1080	MCC	获取价格	10 Amp Schottky Barrier Rectifier 20 to 200 Volts
MBRB1080-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 80V V(RRM), Silicon, D2PACK-3
MBRB1080-BP-HF	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 80V V(RRM), Silicon, D2PACK-3/2
MBRB1080CT	SMC	获取价格	SCHOTTKY RECTIFIER
MBRB1080CT-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, Silicon, GREEN, PLASTIC, D2PAK-3
MBRB1080-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, Silicon, LEAD FREE, D2PAK-3
MBRB1090	VISHAY	获取价格	High Voltage Schottky Rectifiers
MBRB1090	KERSEMI	获取价格	Trench MOS Schottky technology

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