MBRA340T3
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
Employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES
40 VOLTS
Features
• Small Compact Surface Mountable Package with J−Bent Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Guardring for Stress Protection
1
2
Cathode
Anode
1
• Pb−Free Package is Available
Mechanical Characteristics:
2
• Case: Epoxy, Molded
SMA
• Weight: 70 mg (approximately)
CASE 403D
PLASTIC
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
MARKING DIAGRAM
260°C Max. for 10 Seconds
• Shipped in 12 mm tape, 5000 units per 13 inch reel
A34
AYWWG
• Polarity: Cathode Lead Indicated by Polarity Band
• ESD Ratings: Machine Model = C
A34
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ESD Ratings: Human Body Model = 3B
• Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
40
V
RRM
ORDERING INFORMATION
RWM
R
†
Device
Package
Shipping
Average Rectified Forward Current
I
3.0
A
A
O
(At Rated V , T = 100°C)
MBRA340T3
SMA
5000/Tape & Reel
R
L
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
100
FSM
SMA
(Pb−Free)
MBRA340T3G
5000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Storage/Operating Case Temperature
Operating Junction Temperature (Note 1)
T
, T
−55 to +150
−55 to +150
10,000
°C
°C
stg
C
T
J
Voltage Rate of Change
dv/dt
V/ms
(Rated V , T = 25°C)
R
J
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
October, 2006 − Rev. 4
MBRA340T3/D