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MBRA340T3_06 PDF预览

MBRA340T3_06

更新时间: 2024-01-06 22:02:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 54K
描述
Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

MBRA340T3_06 数据手册

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MBRA340T3  
Surface Mount  
Schottky Power Rectifier  
SMA Power Surface Mount Package  
Employing the Schottky Barrier principle in a large area  
metal−to−silicon power diode. State of the art geometry features  
epitaxial construction with oxide passivation and metal overlay  
contact. Ideally suited for low voltage, high frequency rectification, or  
as free wheeling and polarity diodes in surface mount applications  
where compact size and weight are critical to the system.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
3.0 AMPERES  
40 VOLTS  
Features  
Small Compact Surface Mountable Package with J−Bent Leads  
Rectangular Package for Automated Handling  
Highly Stable Oxide Passivated Junction  
Very Low Forward Voltage Drop  
Guardring for Stress Protection  
1
2
Cathode  
Anode  
1
Pb−Free Package is Available  
Mechanical Characteristics:  
2
Case: Epoxy, Molded  
SMA  
Weight: 70 mg (approximately)  
CASE 403D  
PLASTIC  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
Lead and Mounting Surface Temperature for Soldering Purposes:  
MARKING DIAGRAM  
260°C Max. for 10 Seconds  
Shipped in 12 mm tape, 5000 units per 13 inch reel  
A34  
AYWWG  
Polarity: Cathode Lead Indicated by Polarity Band  
ESD Ratings: Machine Model = C  
A34  
A
Y
WW  
G
= Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
ESD Ratings: Human Body Model = 3B  
Device Meets MSL 1 Requirements  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
40  
V
RRM  
ORDERING INFORMATION  
RWM  
R
Device  
Package  
Shipping  
Average Rectified Forward Current  
I
3.0  
A
A
O
(At Rated V , T = 100°C)  
MBRA340T3  
SMA  
5000/Tape & Reel  
R
L
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
100  
FSM  
SMA  
(Pb−Free)  
MBRA340T3G  
5000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Storage/Operating Case Temperature  
Operating Junction Temperature (Note 1)  
T
, T  
−55 to +150  
−55 to +150  
10,000  
°C  
°C  
stg  
C
T
J
Voltage Rate of Change  
dv/dt  
V/ms  
(Rated V , T = 25°C)  
R
J
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. The heat generated must be less than the thermal conductivity from  
Junction−to−Ambient: dP /dT < 1/R .  
q
JA  
D
J
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
October, 2006 − Rev. 4  
MBRA340T3/D  
 

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