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MBRB10100 PDF预览

MBRB10100

更新时间: 2024-02-18 17:31:49
品牌 Logo 应用领域
科盛美 - KERSEMI 二极管
页数 文件大小 规格书
4页 1967K
描述
Trench MOS Schottky technology

MBRB10100 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:D2PAK-3/2Reach Compliance Code:not_compliant
风险等级:5.63其他特性:LOW POWER LOSS
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.85 VJESD-30 代码:R-PSSO-G2
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:100 V最大反向电流:100 µA
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBRB10100 数据手册

 浏览型号MBRB10100的Datasheet PDF文件第2页浏览型号MBRB10100的Datasheet PDF文件第3页浏览型号MBRB10100的Datasheet PDF文件第4页 
MBR(F,B)1090 & MBR(F,B)10100  
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
TO-220AC  
ITO-220AC  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
2
2
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
1
1
MBR1090  
MBR10100  
PIN 1  
MBRF1090  
MBRF10100  
PIN 1  
• Solder dip 260 °C, 40 s (for TO-220AC and  
ITO-220AC package)  
CASE  
PIN 2  
PIN 2  
TO-263AB  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
K
2
TYPICAL APPLICATIONS  
1
For use in high frequency rectifier of switching mode  
power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
MBRB1090  
MBRB10100  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-220AC, ITO-220AC, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
IF(AV)  
10 A  
VRRM  
IFSM  
90 V, 100 V  
150 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for commercial grade, meets JESD 201 class  
1A whisker test  
Polarity: As marked  
VF  
0.65 V  
TJ max.  
150 °C  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
VRRM  
VRWM  
VDC  
MBR1090  
MBR10100  
100  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
90  
90  
90  
V
V
V
A
100  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current at TC = 133 °C  
IF(AV)  
10  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Peak repetitive reverse current at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
0.5  
A
10 000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 150  
1500  
Isolation voltage (ITO-220AC only)  
From terminal to heatsink t = 1 min  
VAC  
V
www.kersemi.com  
476  

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