Datasheet > MBRAF1100T3G

MBRAF1100T3G

更新时间： 2022-03-31 00:01:41

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安森美 - ONSEMI		/
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Schottky Power Rectifier

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MBRAF1100T3G 数据手册

MBRAF1100T3G

Schottky Power Rectifier

Surface Mount Power Package

Schottky Power Rectifiers employ the use of the Schottky Barrier

principle in a large area metal−to−silicon power diode.

State−of−the−artgeometry features epitaxial construction with oxide

passivation and metal overlay contact. Ideally suited for low voltage,

high frequency rectification, or as free wheeling and polarity

protection diodes, in surface mount applications where compact size

and weight are critical to the system. These state−of−the−art devices

have the following features:

http://onsemi.com

SCHOTTKY BARRIER

RECTIFIER

1.0 AMPERE

100 VOLTS

Features

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• High Blocking Voltage − 100 V

• 150°C Operating Junction Temperature

• Guardring for Stress Protection

• This is a Pb−Free Device

SMA−FL

CASE 403AA

PLASTIC

STYLE 6

Mechanical Characteristics

MARKING DIAGRAM

• Case: Epoxy, Molded

• Weight: 95 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

AYWW

RADG

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Shipped in 12 mm Tape and Reel, 5000 Units per Reel

• Cathode Polarity Band

RAD

= Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

RWM

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

100

Average Rectified Forward Current

T = 130°C

F(AV)

1.0

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

FSM

Operating Junction Temperature (Note 1)

Voltage Rate of Change

−65 to +150

°C

dv/dt

V/ns

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The heat generated must be less than the thermal conductivity from

Junction−to−Ambient: dP /dT < 1/R .

Publication Order Number:

July, 2012 − Rev. 0

MBRAF1100T3/D

12 3 4

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