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MBR8045_V01 PDF预览

MBR8045_V01

更新时间: 2022-02-26 13:49:44
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GENESIC /
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3页 661K
描述
Silicon Power Schottky Diode

MBR8045_V01 数据手册

 浏览型号MBR8045_V01的Datasheet PDF文件第2页浏览型号MBR8045_V01的Datasheet PDF文件第3页 
MBR8045 thru MBR80100R  
VRRM = 45 V - 100 V  
IF(AV) = 80 A  
Silicon Power  
Schottky Diode  
Features  
• High Surge Capability  
• Types from 45 V to 100 V VRRM  
DO-5 Package  
• Not ESD Sensitive  
C
A
C
Note:  
1. Standard polarity: Stud is cathode.  
2. Reverse polarity (R): Stud is anode.  
3. Stud is base.  
A
Stud Stud  
(R)  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
MBR8080(R) MBR80100(R)  
Parameter  
Symbol  
MBR8045(R) MBR8060(R)  
Unit  
VRRM  
VRMS  
VDC  
Tj  
80  
50  
100  
70  
Repetitive peak reverse voltage  
RMS reverse voltage  
45  
32  
60  
42  
V
V
80  
100  
DC blocking voltage  
45  
60  
V
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
Operating temperature  
Storage temperature  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
MBR8080(R) MBR80100(R)  
Parameter  
Symbol  
IF(AV)  
IFSM  
MBR8045(R) MBR8060(R)  
Unit  
A
Average forward current (per  
pkg)  
TC = 125 °C  
80  
80  
80  
80  
Peak forward surge current  
(per leg)  
tp = 8.3 ms, half sine  
IFM = 80 A, Tj = 25 °C  
1000  
0.75  
1000  
0.78  
1000  
0.84  
1000  
0.84  
A
Maximum forward voltage  
(per leg)  
VF  
V
Tj = 25 °C  
Tj = 100 °C  
Tj = 150 °C  
1
1
1
1
Maximum instantaneous  
reverse current at rated DC  
blocking voltage (per leg)  
IR  
10  
20  
10  
20  
mA  
10  
20  
10  
20  
Thermal characteristics  
Thermal resistance, junction-  
case (per leg)  
RΘJC  
0.50  
30  
0.50  
30  
0.50  
30  
0.50  
30  
°C/W  
Inch ponds  
(in-pb)  
Mounting torque  
1
Oct. 2018  
http://www.diodemodule.com/silicon_products/studs/mbr8045.pdf  

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