Datasheet > MBR8060

MBR8060

更新时间： 2024-02-07 15:03:28

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描述
Silicon Power Schottky Diode

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技术参数
数据手册

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MBR8060 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.72
二极管类型：	RECTIFIER DIODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

MBR8060 数据手册

MBR8045 thru MBR80100R

V_RRM= 45 V - 100 V

I_F(AV)= 80 A

Silicon Power

Schottky Diode

Features

• High Surge Capability

• Types from 45 V to 100 V V_RRM

DO-5 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

2. Reverse polarity (R): Stud is anode.

3. Stud is base.

Stud Stud

(R)

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MBR8080(R) MBR80100(R)

Parameter

Symbol

MBR8045(R) MBR8060(R)

Unit

V_RRM

V_RMS

V_DC

T_j

100

Repetitive peak reverse voltage

RMS reverse voltage

100

DC blocking voltage

-55 to 150

Operating temperature

Storage temperature

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

MBR8080(R) MBR80100(R)

Parameter

Symbol

I_F(AV)

I_FSM

MBR8045(R) MBR8060(R)

Unit

Average forward current (per

pkg)

T_C= 125 °C

Peak forward surge current

(per leg)

t_p= 8.3 ms, half sine

I_FM= 80 A, T_j= 25 °C

1000

0.75

1000

0.78

1000

0.84

1000

0.84

Maximum forward voltage

(per leg)

V_F

T_j= 25 °C

T_j= 100 °C

T_j= 150 °C

Maximum instantaneous

reverse current at rated DC

blocking voltage (per leg)

I_R

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R_ΘJC

0.50

°C/W

Inch ponds

(in-pb)

Mounting torque

Oct. 2018

http://www.diodemodule.com/silicon_products/studs/mbr8045.pdf

12 3

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