Datasheet > MBR745

MBR745

更新时间： 2024-02-15 08:36:26

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		二极管
页数	文件大小	规格书
3页	37K
描述
7.5 Ampere Schottky Barrier Rectifiers

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中文翻译

获取价格

数据手册
替代型号

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MBR745 数据手册

MBR735 - MBR760

.412(10.5)

MAX

DIA

Features

.185(4.70)

.175(4.44)

.154(3.91)

.148(3.74)

• Low power loss, high efficiency.

• High surge capacity.

• For use in low voltage, high frequency

inverters, free wheeling, and polarity

protection applications.

.113(2.87)

.103(2.62)

.055(1.40)

.045(1.14)

.27(6.86)

.23(5.84)

.594(15.1)

.587(14.91)

Dimensions

are in:

inches (mm)

.16(4.06)

.14(3.56)

• Metal silicon junction, majority carrier

conduction.

.11(2.79)

.10(2.54)

.56(14.22)

.53(13.46)

• High current capacity, low forward

voltage drop.

.037(0.94)

.027(0.68)

• Guard ring for over voltage protection.

TO-220AC

PIN 1 +

.205(5.20)

.195(4.95)

.025(0.64)

.014(0.35)

CASE

7.5 Ampere Schottky Barrier Rectifiers

PIN 2 -

CASE Positive

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Dimensions are in: inches (mm)

Symbol

Parameter

Value

Units

I_O

Average Rectified Current

7.5

Peak Repetitive Forward Current

i_{f(repetitive)}

(Rated V , Square Wave, 20 KHz) @ T = 105 C

Peak Forward Surge Current

8.3 ms single half-sine-wave

Superimposed on rated load (JEDEC method)

Total Device Dissipation

i_f(surge)

150

P_D

2.0

16.6

mW/ C

C/W

Derate above 25 C

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Lead

Storage Temperature Range

R_θ

3.0

R_θ

C/W

-65 to +175

-65 to +150

T_stg

T_J

Operating Junction Temperature

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics

T_A= 25°C unless otherwise noted

Parameter

Device

Units

735

745

750

760

Peak Repetitive Reverse Voltage

Maximum RMS Voltage

DC Reverse Voltage

(Rated V_R)

10,000

V/uS

Voltage Rate of Change (Rated V_R)

Maximum Reverse Current

0.1

0.5

@ rated V_R

T = 25 C

T = 125 C

Maximum Forward Voltage

0.75

0.65

_{F =}7.5 A, T_C= 25 C

0.57

0.84

0.72

I_{F =}7.5 A, T_C= 125 C

I_{F =}15 A, T_C= 25 C

I_{F =}15 A, T_C= 125 C

Peak Repetitive Reverse Surge Current

2.0 us Pulse Width, f = 1.0 KHz

1.0

0.5

1999 Fairchild Semiconductor Corporation

MBR735 - MBR760, Rev. A

12 3

中文翻译

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MBR745 替代型号

型号	品牌	替代类型	描述	数据表
MBR745G	ONSEMI	功能相似	SWITCHMODE? Power Rectifiers
STPS745D	STMICROELECTRONICS	功能相似	POWER SCHOTTKY RECTIFIER

与MBR745相关器件

型号	品牌	获取价格	描述	数据表
MBR745-E3/45	VISHAY	获取价格	Schottky Barrier Rectifier
MBR745G	ONSEMI	获取价格	SWITCHMODE? Power Rectifiers
MBR745-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 45V V(RRM), Silicon, TO-220AC, LEAD F
MBR745HE3/45	VISHAY	获取价格	Schottky Barrier Rectifier
MBR745-HE3/45	VISHAY	获取价格	DIODE 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2,
MBR745-N3	VISHAY	获取价格	Schottky Rectifier, 7.5 A
MBR745PBF	VISHAY	获取价格	Schottky Rectifier, 7.5 A
MBR745PBF	INFINEON	获取价格	SCHOTTKY RECTIFIER 7.5 Amp
MBR745TRL	INFINEON	获取价格	SCHOTTKY RECTIFIER 7.5 Amp
MBR745TRLPBF	INFINEON	获取价格	SCHOTTKY RECTIFIER 7.5 Amp

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