Datasheet > MBR750HE3/45

MBR750HE3/45

更新时间： 2024-11-26 22:55:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	121K
描述
DIODE SCHOTTKY 50V 7.5A TO220AC

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数据手册

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MBR750HE3/45 数据手册

MBR745, MBR760, MBRF745

www.vishay.com

Vishay General Semiconductor

Schottky Barrier Rectifier

FEATURES

• Power pack

TO-220AC

ITO-220AC

• Guardring for overvoltage protection

• Low power loss, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106

MBR745

MBR760

MBRF745

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PIN 1

CASE

PIN 2

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of switching

mode power supplies, freewheeling diodes, DC/DC

converters, and polarity protection application.

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: TO-220AC, ITO-220AC

I_F(AV)

V_RRM

I_FSM

7.5 A

45 V, 60 V

150 A

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

V_F

0.57 V, 0.65 V

150 °C

T_Jmax.

Polarity: as marked

Package

TO-220AC, ITO-220AC

Single

Mounting Torque: 10 in-lbs maximum

Diode variations

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR745

MBR760

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

V_RRM

V_RWM

V_DC

Maximum DC blocking voltage

Maximum average forward rectified current (fig. 1)

I_F(AV)

7.5

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load

I_FSM

150

Peak repetitive reverse surge current at t_p= 2.0 μs, 1 kHz

Voltage rate of change (rated V_R)

I_RRM

dV/dt

T_J

1.0

0.5

10 000

-65 to +150

-65 to +175

1500

Operating junction temperature range

°C

Operating storage temperature range

T_STG

V_AC

Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min

Revision: 27-Nov-17

Document Number: 88680

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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