MBR5150 thru MBR5200
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dimensions TO-220AC
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
C
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
12.70 14.73
14.23 16.51
9.66 10.66
A
C
C(TAB)
3.54
5.85
2.54
1.15
-
4.08
6.85
3.42
1.77
6.35
0.89
5.33
4.82
0.56
2.49
1.39
A=Anode, C=Cathode, TAB=Cathode
-
0.250
VRRM
V
VRMS
V
VDC
V
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
0.64
4.83
3.56
0.38
2.04
0.64
MBR5150
MBR5200
150
200
105
140
150
200
Symbol
Characteristics
Maximum Ratings
Unit
I(AV)
Maximum Average Forward Rectified Current @TC=120oC
5
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
IFSM
120
dv/dt
Voltage Rate Of Change (Rated VR)
10000
V/us
o
IF=5A @TJ=25 C
0.95
-
0.95
0.80
o
Maximum Forward
Voltage (Note 1)
IF=5A @TJ=125 C
IF=10A @TJ=25oC
IF=10A @TJ=125oC
VF
V
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
0.05
15
IR
mA
@TJ=125oC
4.5
oC/W
ROJC
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
-55 to +150
-55 to +150
oC
oC
TJ
TSTG
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications