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MBR5200D PDF预览

MBR5200D

更新时间: 2024-11-15 17:01:55
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 196K
描述
TO-252

MBR5200D 数据手册

 浏览型号MBR5200D的Datasheet PDF文件第2页浏览型号MBR5200D的Datasheet PDF文件第3页浏览型号MBR5200D的Datasheet PDF文件第4页 
RoHS  
COMPLIANT  
MBR5200D  
Schottky Diodes  
Features  
● High frequency operation  
Pin 2  
● Low forward voltage drop  
● High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
● Guard ring for enhanced ruggedness and long term reliability  
● Solder dip 275 °C max. 7 s, per JESD 22-B106  
Typical Applications  
Typical applications are in switching power supplies, converters,  
freewheeling diodes, and reverse battery protection.  
Pin 1  
Pin 3  
Mechanical Data  
P
ackage: TO-252  
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Polarity: As marked  
(T =25Unless otherwise specified  
Maximum Ratings  
a
PARAMETER  
SYMBOL  
UNIT  
MBR5200D  
MBR5200D  
200  
Device marking code  
Repetitive Peak Reverse Voltage  
VRRM  
IO  
V
A
Average Rectified Output Current  
@60Hz sine wave, R-load, Ta=25℃  
5
Surge(Non-repetitive)Forward Current  
@60Hz half sine-wave, 1 cycle, Ta=25℃  
IFSM  
A
120  
60  
Current Squared Time  
@1ms≤t≤8.3ms Tj=25℃,  
A2s  
I2t  
Tstg  
Tj  
Storage Temperature  
Junction Temperature  
-55 ~ +175  
-55 ~ +175  
T =25Unless otherwise specified)  
Electrical Characteristics  
a
TEST  
CONDITIONS  
MBR5200D  
PARAMETER  
SYMBOL  
UNIT  
Maximum instantaneous forward  
voltage drop per diode  
VFM  
V
I
FM=5.0A  
0.9  
0.1  
VRM=VRRM  
Ta=25℃  
IRRM1  
Maximum DC reverse current at  
rated DC blocking voltage per diode  
mA  
VRM=VRRM  
Ta=125℃  
IRRM2  
20  
Note1:Pulse test:300uS pulse widh,1% duty cycle  
Note2:Pulse test:pulse widh 40mS  
1 / 4  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-B3335  
www.21yangjie.com  
Rev.1.0,19-Feb-24  

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