RoHS
COMPLIANT
MBR5200D
Schottky Diodes
Features
● High frequency operation
● Low forward voltage drop
● High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
● Guard ring for enhanced ruggedness and long term reliability
● Solder dip 275 °C max. 7 s, per JESD 22-B106
Typical Applications
Typical applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Mechanical Data
P
●
ackage: TO-252
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
● Polarity: As marked
(T =25℃Unless otherwise specified
■
Maximum Ratings
)
a
PARAMETER
SYMBOL
UNIT
MBR5200D
MBR5200D
200
Device marking code
Repetitive Peak Reverse Voltage
VRRM
IO
V
A
Average Rectified Output Current
@60Hz sine wave, R-load, Ta=25℃
5
Surge(Non-repetitive)Forward Current
@60Hz half sine-wave, 1 cycle, Ta=25℃
IFSM
A
120
60
Current Squared Time
@1ms≤t≤8.3ms Tj=25℃,
A2s
℃
℃
I2t
Tstg
Tj
Storage Temperature
Junction Temperature
-55 ~ +175
-55 ~ +175
(T =25℃Unless otherwise specified)
■Electrical Characteristics
a
TEST
CONDITIONS
MBR5200D
PARAMETER
SYMBOL
UNIT
Maximum instantaneous forward
voltage drop per diode
VFM
V
I
FM=5.0A
0.9
0.1
VRM=VRRM
Ta=25℃
IRRM1
Maximum DC reverse current at
rated DC blocking voltage per diode
mA
VRM=VRRM
Ta=125℃
IRRM2
20
Note1:Pulse test:300uS pulse widh,1% duty cycle
Note2:Pulse test:pulse widh 40mS
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Yangzhou Yangjie Electronic Technology Co., Ltd.
S-B3335
www.21yangjie.com
Rev.1.0,19-Feb-24