Datasheet > MBR5200F

MBR5200F

更新时间： 2024-11-15 17:01:39

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
4页	188K
描述
ITO-220AC

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中文翻译

获取价格

数据手册

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MBR5200F 数据手册

RoHS

COMPLIANT

MBR5200F

Schottky Diodes

Features

● High frequency operation

● Low forward voltage drop

● High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

● Guard ring for enhanced ruggedness and long term reliability

● Solder dip 275 °C max. 7 s, per JESD 22-B106

Typical Applications

Typical applications are in switching power supplies, converters,

freewheeling diodes, and reverse battery protection.

Mechanical Data

●

ackage: ITO-220AC

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant

● Terminals: Tin plated leads, solderable per

J-STD-002 and JESD22-B102

● Polarity: As marked

(T =25℃Unless otherwise specified

■

Maximum Ratings

）

MBR5200F

200

PARAMETER

SYMBOL

UNIT

Device marking code

V_RRM

I_O

Repetitive Peak Reverse Voltage

Average Rectified Output Current

@60Hz sine wave, R-load, Ta=25℃

Surge(Non-repetitive)Forward Current

@60Hz half sine-wave, 1 cycle, Ta=25℃

I_FSM

120

Current Squared Time

@1ms≤t≤8.3ms Tj=25℃，

A²s

℃

I²t

T_stg

Storage Temperature

Junction Temperature

-55 ~ +175

（T =25℃Unless otherwise specified）

■Electrical Characteristics

TEST

CONDITIONS

MBR5200F

PARAMETER

SYMBOL

UNIT

Maximum instantaneous forward

voltage drop per diode

V_FM

I_FM=5.0A

0.9

0.1

V_RM=V_RRM

Ta=25℃

I_RRM1

Maximum DC reverse current at

rated DC blocking voltage per diode

V_RM=V_RRM

Ta=125℃

I_RRM2

Note1:Pulse test:300uS pulse widh,1% duty cycle

Note2:Pulse test:pulse widh 40mS

1 / 4

S-B1232

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.1,02-Aug-23

12 3 4

中文翻译

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