MBR520-MBR5100
SCHOTTKY BARRIER RECTIFIER DIODES
VOLTAGE RANGE: 20 - 100V
CURRENT: 5.0 A
Features
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!
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
High Current Capability
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Low Power Loss, High Efficiency
High Surge Current Capability
A
B
A
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
C
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
Protection Applications
D
Mechanical Data
Case: DO-201AD, Molded Plastic
!
!
DO-201AD
Min
Terminals: Plated Leads Solderable per
Dim
A
Max
¾
MIL-STD-202, Method 208
Polarity: Cathode Band
25.40
7.20
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!
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B
9.50
1.30
5.30
Weight: 1.2 grams (approx.)
Mounting Position: Any
Marking: Type Number
C
1.20
D
4.80
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Symbol MBR520 MBR530 MBR540 MBR550 MBR560 MBR580 MBR5100 Unit
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
VR
20
14
30
21
40
28
50
35
60
42
80
56
100
70
V
RMS Reverse Voltage
VR(RMS)
V
A
Average Rectified Output Current @TL = 100°C
(Note 1)
IO
5.0
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
150
A
Forward Voltage
@IF = 5.0A
VFM
IRM
0.55
0.70
0.85
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.5
50
mA
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
Cj
500
400
pF
°C/W
°C
RꢀJA
10
Tj, TSTG
-65 to +150
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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