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MBR3045PT

更新时间： 2024-09-28 11:11:51
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关瞄准线功效局域网
页数 文件大小 规格书
4页 64K
描述
SWITCHMODE Power Rectifier

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中文翻译

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MBR3045PT 数据手册

 浏览型号MBR3045PT的Datasheet PDF文件第2页浏览型号MBR3045PT的Datasheet PDF文件第3页浏览型号MBR3045PT的Datasheet PDF文件第4页 
MBR3045PT  
Preferred Device  
SWITCHMODEt  
Power Rectifier  
These state−of−the−art devices use the Schottky Barrier principle  
with a platinum barrier metal.  
Features  
http://onsemi.com  
• Dual Diode Construction; Terminals 1 and 3 may be Connected for  
Parallel Operation at Full Rating  
SCHOTTKY BARRIER  
RECTIFIER  
30 AMPERES, 45 VOLTS  
• Guard−ring for Stress Protection  
• Low Forward Voltage  
• 175°C Operating Junction Temperature  
• Pb−Free Package is Available*  
1
2
4
Mechanical Characteristics  
• Case: Epoxy, Molded  
3
• Weight: 4.3 Grams (Approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
MARKING  
DIAGRAM  
• Lead Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
4
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
45  
V
RRM  
RWM  
AYWWG  
MBR3045PT  
SOT−93  
CASE 340D  
PLASTIC  
V
I
1
V
R
2
Average Rectified Forward Current  
A
A
A
A
3
F(AV)  
(Rated V , T = 105°C)  
Per Device  
Per Diode  
30  
15  
R
C
Peak Repetitive Forward Current,  
I
30  
200  
2.0  
FRM  
(Rated V , Square Wave,  
R
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
20 kHz) Per Diode  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
FSM  
= Pb−Free Package  
Peak Repetitive Reverse Current (2.0 ms,  
I
RRM  
1.0 kHz) Per Diode (See Figure 6)  
ORDERING INFORMATION  
Storage Temperature Range  
T
−65 to +175  
−65 to +175  
175  
°C  
°C  
°C  
stg  
Device  
Package  
Shipping  
Operating Junction Temperature (Note 1)  
T
J
MBR3045PT  
SOT−93  
30 Units / Rail  
30 Units / Rail  
Peak Surge Junction Temperature  
(Forward Current Applied)  
T
J(pk)  
MBR3045PTG  
SOT−93  
(Pb−Free)  
Voltage Rate of Change (Rated V )  
dv/dt  
10,000  
V/ms  
R
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Preferred devices are recommended choices for future use  
and best overall value.  
1. The heat generated must be less than the thermal conductivity from  
Junction−to−Ambient: dP /dT < 1/R .  
q
JA  
D
J
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 3  
MBR3045PT/D  
 
1234

中文翻译

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MBR3045PT 替代型号

型号 品牌 替代类型 描述 数据表
MBR3045PTG ONSEMI

类似代替

 SWITCHMODE Power Rectifier
MBR3045PT FAIRCHILD

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