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MBR3030PT-B PDF预览

MBR3030PT-B

更新时间： 2024-01-08 15:06:56
品牌 Logo 应用领域
美台 - DIODES 整流二极管
页数 文件大小 规格书
2页 67K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, Silicon,

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中文翻译

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MBR3030PT-B 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：TO-247包装说明：ROHS COMPLIANT, PLASTIC, TO-247S, TO-3PS, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.68Is Samacsys：N
其他特性：FREE WHEELING DIODE, LOW POWER LOSS应用：EFFICIENCY
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJEDEC-95代码：TO-247
JESD-30 代码：R-PSFM-T3最大非重复峰值正向电流：275 A
元件数量：2相数：1
端子数量：3最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：30 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
最大重复峰值反向电压：30 V表面贴装：NO
技术：SCHOTTKY端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MBR3030PT-B 数据手册

 浏览型号MBR3030PT-B的Datasheet PDF文件第2页 
MBR3030PT - MBR3060PT  
30A SCHOTTKY BARRIER RECTIFIER  
Features  
·
·
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
Low Power Loss, High Efficiency  
High Surge Capability  
High Current Capability and Low Forward  
Voltage Drop  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
TO-3P  
Dim  
A
B
C
D
E
Min  
3.20  
Max  
3.50  
·
·
·
4.59  
5.16  
A
B
20.80  
19.70  
2.10  
21.30  
20.20  
2.40  
H
·
·
J
S
R
C
D
G
H
J
0.51  
0.76  
15.90  
1.70  
16.40  
2.70  
K
L
K
L
3.10Æ  
3.50  
3.30Æ  
4.51  
P*  
*2 Places  
Q
Mechanical Data  
G
M
N
P
5.20  
5.70  
N
·
·
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Body  
Marking: Type Number  
Weight: 5.6 grams (approx.)  
Mounting Position: Any  
1.12  
1.22  
1.93  
2.18  
E
·
·
·
·
Q
R
S
2.97  
3.22  
M
M
11.70  
12.80  
4.30 Typical  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
Characteristic  
Symbol  
Unit  
3030PT 3035PT 3040PT 3045PT 3050PT 3060PT  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
21  
35  
40  
28  
45  
50  
35  
60  
42  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
24.5  
31.5  
V
A
Average Rectified Output Current  
@ TC = 125°C  
30  
(Note 1)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
200  
A
Forward Voltage Drop  
per element (Note 3)  
@ IF = 20A, TC  
= 25°C  
0.65  
0.60  
0.75  
0.65  
VFM  
IRM  
V
@ IF = 20A, TC = 125°C  
Peak Reverse Current  
at Rated DC Blocking Voltage, per element @ TC = 125°C  
@ TC 25°C  
=
1.0  
60  
5.0  
100  
mA  
Cj  
Typical Junction Capacitance  
(Note 2)  
(Note 1)  
700  
pF  
K/W  
V/µs  
°C  
RqJc  
Typical Thermal Resistance Junction to Case  
Voltage Rate of Change (Rated VR)  
Operating and Storage Temperature Range  
1.4  
2.0  
dV/dt  
Tj, TSTG  
10,000  
-65 to +150  
Notes:  
1. Thermal resistance junction to case mounted on heatsink.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. Pulse width £300 ms, duty cycle £2%.  
DS23017 Rev. E-2  
1 of 2  
MBR3030PT - MBR3060PT  
12

中文翻译

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