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MBR3030PTP PDF预览

MBR3030PTP

更新时间: 2023-08-15 00:00:00
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 68K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 30V V(RRM), Silicon, TO-247, PLASTIC PACKAGE-3

MBR3030PTP 数据手册

 浏览型号MBR3030PTP的Datasheet PDF文件第2页浏览型号MBR3030PTP的Datasheet PDF文件第3页 
MBR3020PT  
THRU  
MBR3060PT  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
30 Amp Schottky  
Barrier Rectifier  
20 to 60 Volts  
Guard Ring For Transient Protection  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Marking : type number  
Low Power Loss, High Efficiency  
Maximum Ratings  
TO-247  
Operating Temperature: -55oC to +150oC  
Storage Temperature: -55oC to +150oC  
Maximum  
MCC Part Number Re current Peak  
Reverse Voltage  
Maximum DC  
Blocking  
F
E
A
Maximum  
RMS Voltage  
Voltage  
G
B
O
K
MBR3020PT  
MBR3030PT  
MBR3035PT  
MBR3040PT  
MBR3045PT  
MBR3060PT  
20V  
30V  
35V  
40V  
45V  
60V  
14V  
21V  
24.5V  
28V  
31.5V  
42V  
20V  
30V  
35V  
40V  
45V  
60V  
PIN  
2
3
1
D
H
C
I
N
J
Electrical Characteristics @ 25oC Unless Otherwise Specified  
L
M
L
IF(AV)  
Average Forward Current  
30.0A  
TC=125oC  
PIN 1  
PIN 3  
PIN 2  
CASE  
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms half sine  
Maximum Instantaneous  
Forward Voltage  
MBR3020PT-3045PT  
MBR3060PT  
MBR3020PT-3045PT  
MBR3060PT  
Maximum DC Reverse  
Current At Rated DC  
Blocking Voltage  
I
FM = 20.0A  
TA =25o C  
ꢁꢂꢃꢉꢄꢊꢂꢇꢄꢊ  
VF  
.63V  
.75V  
.76V  
.80V  
ꢀ ꢀ ꢀ ꢀ  
INCHES  
ꢃꢂꢄ  
MM  
IFM =30.0A  
ꢁꢂꢃ  
ꢃꢅꢆ  
ꢃꢂꢄ  
ꢃꢅꢆ  
ꢄꢇꢈꢉ  
TA =25o C  
A
B
.620  
.837  
.640  
.856  
15.75  
21.25  
16.25  
21.75  
C
.772  
.791  
19.60  
20.10  
D
E
.149  
.074  
.172  
.082  
3.78  
1.88  
4.38  
2.08  
TC=25o C  
TC=25o C  
F
G
.192  
.202  
4.87  
5.13  
4.4 TYP  
IR  
MBR3020PT-3045PT  
MBR3060PT  
MBR3020PT-3045PT  
MBR3060PT  
1mA  
5mA  
60mA  
100mA  
.173 TYP  
H
.075  
.085  
1.90  
2.16  
TC=125o C  
TC=125o C  
Measured at  
I
J
.115  
.044  
.127  
.048  
2.93  
1.12  
3.22  
1.22  
K
.114  
.142  
2.90  
3.60  
Typical Junction  
Capacitance  
L
.205  
.083  
.020  
.076  
.224  
.095  
.030  
.086  
5.20  
2.10  
0.51  
1.93  
5.70  
2.40  
0.76  
2.18  
Cj  
500pF  
1.0MHz,  
VR=4.0V  
M
N
O
Pulse test: Pulse width 300 usec, duty cycle 2%.  
www.mccsemi.com  
Revision: 6  
2007/07/19  
1 of 3  

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