Datasheet > MBR30035CTR

MBR30035CTR

更新时间： 2024-11-06 02:55:19

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	716K
描述
Silicon Power Schottky Diode

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中文翻译

获取价格

数据手册

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MBR30035CTR 数据手册

MBR30020CT thru MBR30040CTR

V_RRM= 20 V - 40 V

I_F(AV)= 300 A

Silicon Power

Schottky Diode

Features

• High Surge Capability

• Types from 20 V to 40 V V_RRM

Twin Tower Package

• Not ESD Sensitive

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MBR30035CT(R) MBR30040CT(R)

Parameter

Symbol

MBR30020CT(R) MBR30030CT(R)

Unit

Repetitive peak reverse

voltage

V_RRM

V_RMS

V_DC

T_j

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

MBR30035CT(R) MBR30040CT(R)

Parameter

Symbol

MBR30020CT(R) MBR30030CT(R)

Unit

Average forward current

(per pkg)

T_C= 125 °C

I_F(AV)

300

Peak forward surge

current (per leg)

I_FSMt_p= 8.3 ms, half sine

2000

Maximum forward

voltage (per leg)

V_FI_FM= 150 A, T_j= 25 °C

T_j= 25 °C

0.70

Reverse current at rated

DC blocking voltage

(per leg)

I_R

T_j= 100 °C

T_j= 150 °C

Thermal characteristics

Thermal resistance,

junction-case, per leg

R_ΘJC

0.40

°C/W

Oct. 2018

http://www.diodemodule.com/silicon_products/modules/mbr30020ct.pdf

12 3

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