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MBR30045CTR PDF预览

MBR30045CTR

更新时间: 2024-11-06 01:04:23
品牌 Logo 应用领域
GENESIC 局域网二极管
页数 文件大小 规格书
3页 724K
描述
Silicon Power Schottky Diode

MBR30045CTR 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:R-PUFM-X2Reach Compliance Code:compliant
风险等级:5.68应用:POWER
外壳连接:ANODE配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.65 VJESD-30 代码:R-PUFM-X2
最大非重复峰值正向电流:2500 A元件数量:2
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-40 °C
最大输出电流:150 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:45 V
最大反向电流:8000 µA表面贴装:NO
技术:SCHOTTKY端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBR30045CTR 数据手册

 浏览型号MBR30045CTR的Datasheet PDF文件第2页浏览型号MBR30045CTR的Datasheet PDF文件第3页 
MBR30045CT thru MBR300100CTR  
VRRM = 45 V - 100 V  
IF(AV) = 300 A  
Silicon Power  
Schottky Diode  
Features  
• High Surge Capability  
• Types from 45 V to 100 V VRRM  
Twin Tower Package  
• Not ESD Sensitive  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
MBR30080CT(R) MBR300100CT(R)  
Parameter  
Symbol  
MBR30045CT(R) MBR30060CT(R)  
Unit  
Repetitive peak reverse  
voltage  
VRRM  
80  
100  
45  
60  
V
VRMS  
VDC  
Tj  
57  
70  
RMS reverse voltage  
DC blocking voltage  
Operating temperature  
Storage temperature  
32  
42  
V
V
80  
100  
45  
60  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
MBR30080CT(R) MBR300100CT(R)  
Parameter  
Symbol  
MBR30045CT(R) MBR30060CT(R)  
Unit  
A
Average forward current  
(per pkg)  
TC = 125 °C  
IF(AV)  
300  
2000  
0.84  
300  
2000  
0.84  
300  
300  
Peak forward surge  
current (per leg)  
IFSM tp = 8.3 ms, half sine  
2000  
2000  
A
Maximum forward  
voltage (per leg)  
VF IFM = 150 A, Tj = 25 °C  
Tj = 25 °C  
V
0.70  
0.75  
1
1
1
1
Reverse current at rated  
DC blocking voltage  
(per leg)  
IR  
Tj = 100 °C  
Tj = 150 °C  
10  
50  
10  
50  
mA  
10  
50  
10  
50  
Thermal characteristics  
Thermal resistance,  
junction-case, per leg  
RΘJC  
0.40  
0.40  
0.40  
0.40  
°C/W  
1
Oct. 2018  
http://www.diodemodule.com/silicon_products/modules/mbr30045ct.pdf  

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