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MBR30100 PDF预览

MBR30100

更新时间: 2024-11-06 07:08:11
品牌 Logo 应用领域
ASEMI 二极管瞄准线高压功效局域网
页数 文件大小 规格书
3页 515K
描述
Dual High-Voltage Schottky Rectifiers

MBR30100 数据手册

 浏览型号MBR30100的Datasheet PDF文件第2页浏览型号MBR30100的Datasheet PDF文件第3页 
MBR3080 THUR MBR30100  
Dual High-Voltage Schottky Rectifiers  
REV:1.01  
◆ Half Bridge Rectified、Common Cathode Structure.  
◆ Multilayer Metal -Silicon Potential Structure.  
◆ Low Power Waste,High Efficiency.  
Typical Reference  
Data  
VRRM= 80V  
IF(AV)= 30A  
◆ Beautiful High Temperature Character.  
◆ Have Over Voltage protect loop,high reliability.  
◆ RoHs Product.  
VRRM= 90V  
IF(AV)= 30A  
● Low Voltage High Frequency Switching Power Supply.  
● Low Voltage High Frequency Invers Circuit.  
VRRM= 100V  
IF(AV)= 30A  
● Low Voltage Continued Circuit and Protection Circuit.  
■ MBR3080、MBR3090、MBR30100 Schottky diode,in the  
manufacture uses the main process technology includes:  
Silicon epitaxial substrate, P+ loop technology,The  
potential metal and the silicon alloy technology, the  
device uses the two chip, the common cathode, the plastic  
package structure.  
Polarity  
Absolute Maximum Ratings  
Item  
MBR30100  
Symbol MBR3080 MBR3090  
Unit  
Maximal Inverted Repetitive Peak Voltage  
Maximal DC Interdiction Voltage  
VRRM  
VDC  
80  
80  
90  
90  
100  
100  
V
V
Average Rectified Forward Current TC=150℃  
Device  
Whole  
20  
10  
IFAV  
A
Unilateral  
Forward Peak Surge Current(Rated Load 8.3 Half  
Mssine Wave-According to JEDEC Method)  
150  
IFSM  
A
Operating Junction Temperature  
Storage Temperature  
-40- +175  
-40- +175  
TJ  
TSTG  
Electricity Character  
Represent  
ative  
Test Condition  
Item  
Minimum  
MBR3080 MBR3090 MBR30100Unit  
100  
1
TJ =25℃  
TJ =125℃  
VF TJ =25℃  
uA  
mA  
IR  
VR=VRRM  
IF=15A  
0.82 0.84 0.86 V  
www.asemi.tw  
Page1  

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