5秒后页面跳转
MBR20H100CTHC0 PDF预览

MBR20H100CTHC0

更新时间: 2024-09-22 01:08:55
品牌 Logo 应用领域
TSC 局域网功效瞄准线二极管
页数 文件大小 规格书
4页 205K
描述
Dual Common Cathode Schottky Rectifier

MBR20H100CTHC0 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.13
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT参考标准:AEC-Q101
最大重复峰值反向电压:100 V最大反向电流:5 µA
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

MBR20H100CTHC0 数据手册

 浏览型号MBR20H100CTHC0的Datasheet PDF文件第2页浏览型号MBR20H100CTHC0的Datasheet PDF文件第3页浏览型号MBR20H100CTHC0的Datasheet PDF文件第4页 
MBR20H100CT thru MBR20H200CT  
Taiwan Semiconductor  
CREAT BY ART  
Dual Common Cathode Schottky Rectifier  
FEATURES  
- Low power loss, high efficiency  
- Guardring for overvoltage protection  
- High surge current capability  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
MECHANICAL DATA  
TO-220AB  
Case: TO-220AB  
Molding compound, UL flammability classification rating 94V-0  
Base P/N with suffix "G" on packing code - halogen-free  
Base P/N with prefix "H" on packing code - AEC-Q101 qualified  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test,  
with prefix "H" on packing code meet JESD 201 class 2 whisker test  
Polarity: As marked  
Mounting torque: 5 in-lbs maximum  
Weight: 1.8 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
MBR  
20H100CT  
100  
MBR  
20H150CT  
150  
MBR  
20H200CT  
200  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
70  
105  
140  
Maximum DC blocking voltage  
100  
150  
200  
Maximum average forward rectified current  
IF(AV)  
20  
Peak repetitive forward current  
(Rated VR, Square Wave, 20KHz)  
IFRM  
20  
A
Peak forward surge current, 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
IRRM  
150  
A
A
Peak repetitive reverse surge current (Note 1)  
1.0  
0.5  
Maximum instantaneous forward voltage (Note 2)  
IF= 10A, TJ=25  
0.85  
0.75  
0.95  
0.85  
0.88  
0.75  
0.97  
0.85  
IF= 10A, TJ=125℃  
VF  
V
IF= 20A, TJ=25℃  
IF= 20A, TJ=125℃  
Maximum reverse current @ rated VR  
TJ=25 ℃  
IR  
5
2
μA  
TJ=125 ℃  
mA  
V/μs  
OC/W  
OC  
Voltage rate of change (Rated VR)  
Typical thermal resistance  
10000  
1.5  
dV/dt  
RθJC  
TJ  
Operating junction temperature range  
Storage temperature range  
- 55 to +175  
- 55 to +175  
OC  
TSTG  
Note 1: tp = 2.0 μs, 1.0KHz  
Note 2: Pulse test with PW=300μs, 1% duty cycle  
Document Number: DS_D1308064  
Version: H13  

与MBR20H100CTHC0相关器件

型号 品牌 获取价格 描述 数据表
MBR20H100CTHE3/45 VISHAY

获取价格

Dual Common-Cathode High-Voltage Schottky Rectifier
MBR20H100CT-HE3/45 VISHAY

获取价格

DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3,
MBR20H100CTP MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-220AB, PLASTI
MBR20H100FCT COMCHIP

获取价格

Schottky Barrier Rectifiers
MBR20H100FCT RECTRON

获取价格

Reverse Voltage Vr : 100 V;Forward Current Io : 20 A;Max Surge Current : 150 A;Forward Vol
MBR20H100FCT-G COMCHIP

获取价格

Schottky Barrier Rectifiers
MBR20H150C RECTRON

获取价格

Reverse Voltage Vr : 150 V;Forward Current Io : 20.0 A;Max Surge Current : 130 A;Forward V
MBR20H150CCT(TO-220&220FP&263) SISEMIC

获取价格

抗高浪性能 高功效 低正向电压 大电流 低功耗 符合RoHS规范
MBR20H150CT LGE

获取价格

20.0AMP. Schottky Barrier Rectifiers
MBR20H150CT TSC

获取价格

20.0 AMPS. Schottky Barrier Rectifiers