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MBR20H100FCT-G PDF预览

MBR20H100FCT-G

更新时间： 2024-09-21 07:17:59
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上华 - COMCHIP /
页数 文件大小 规格书
3页 83K
描述
Schottky Barrier Rectifiers

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MBR20H100FCT-G 数据手册

 浏览型号MBR20H100FCT-G的Datasheet PDF文件第2页浏览型号MBR20H100FCT-G的Datasheet PDF文件第3页 
Schottky Barrier Rectifiers  
Comchip  
S M D D i o d e s S p e c i a l i s t  
MBR20H100FCT-G Thru. MBR20H200FCT-G  
Reverse Voltage: 100 to 200 V  
Forward Current: 20 A  
RoHS Device  
Features  
-Plastic material used carries underwriters laboratory  
ITO-220AB  
laboratory classifications 94V-0.  
0.189(4.80)  
-Guard ring for transient protection.  
0.173(4.40)  
0.118(3.00)  
0.106(2.70)  
0.138(3.50)  
0.122(3.10)  
-Low power loss high efficiency.  
0.406(10.30)  
0.386( 9.80)  
0.118(3.00)  
0.102(2.60)  
-High current capability, low forward voltage drop.  
-High surge capacity.  
-For use in power supply-output rectification,  
power management, instrumentation.  
-Guarding for overvoltage protection.  
-High temperature soldering guaranteed:  
260°C/10 seconds,0.25”(6.35mm) from case.  
0.610(15.50)  
0.571(14.50)  
0.157(4.00)  
0.142(3.60)  
Mechanical Data  
-Case: JEDEC ITO-220AB, molded plastic body.  
0.071(1.80)  
0.055(1.40)  
0.571(14.50)  
0.531(13.50)  
-Terminals: Pure tin plated, lead free.Solderable per  
MIL-STD-750,Method 2026  
0.059(1.50)  
0.043(1.10)  
-Polarity: As marked  
-Mounting position: Any  
-Mounting torque: 5in. -1bs.max  
-Weight: 2.24 grams  
0.030(0.76)  
0.020(0.51)  
0.112(2.84)  
0.088(2.24)  
0.030(0.76)  
0.020(0.51)  
0.114(2.90)  
0.098(2.50)  
Dimensions in inches and (millimeter)  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load derate current by 20%.  
MBR  
20H100FC-G  
MBR  
20H150FCT-G  
MBR  
20H200FCT-G  
Symbol  
Parameter  
Unit  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
100  
150  
200  
V
VRMS  
VDC  
70  
105  
150  
14  
V
V
100  
200  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current @ TC=125°C  
I(AV)  
20.0  
20.0  
A
A
Peak repetitive forward current (rated VR, square wave,20KHZ)  
at TC=125°C  
IFRM  
Peak Forward Surage Current ,  
IFSM  
IRRM  
8.3ms Single Half Sine-Wave  
150  
A
A
Super Imposed On Rated Load(JEDEC Method)  
Peak Repetitive Reverse Surge Current (Note 1)  
1.0  
0.5  
IF=10A@ TJ= 25°C  
0.85  
0.75  
0.95  
0.85  
0.88  
0.75  
0.97  
0.85  
Maximum Instantaneous forward voltage at:  
forward voltage at:  
IF=10A@ TJ=125°C  
IF=20A@ TJ= 25°C  
IF=20A@ TJ=125°C  
VF  
V
(Note 2)  
µA  
mA  
5
2
Maximum Instantaneous reverse current @ Tc= 25°C at  
Rate DC blocking voltage @ Tc= 125°C at (Note 2)  
IR  
Voltage rate kf change (Rated VR )  
Maximum Typical Thermal Resistance (Note3)  
Operating Junction Temperature Range  
Storage Temperature Range  
dV/dt  
RθJC  
TJ  
10000  
V/uS  
1.50  
°C/W  
°C  
-65 to +175  
-65 to +175  
TSTG  
°C  
NOTES:  
1. 2.0us Pulse Width, f=1.0 KHz.  
2. Pulse test: 300us pulse width, 1% duty cycle.  
3. Thermal Resistsnce from junction to case per leg,Mount on heatsink sixe of 2in*3in*0.25in Al-plate.  
REV:A  
Page 1  
QW-BB049  
Comchip Technology CO., LTD.  
123

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