Datasheet > MBR20H150CT_11

MBR20H150CT_11

更新时间： 2024-02-01 05:46:00

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
6页	102K
描述
Dual Common-Cathode High-Voltage Schottky Rectifier

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中文翻译

获取价格

数据手册

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MBR20H150CT_11 数据手册

MBR20H150CT, MBRF20H150CT, SB20H150CT-1

www.vishay.com

Vishay General Semiconductor

Dual Common-Cathode High-Voltage Schottky Rectifier

Low Leakage Current 5.0 μA

FEATURES

ITO-220AB

TO-220AB

• Guardring for overvoltage protection

• Low power loss, high efficiency

• Low forward voltage drop

• High frequency operation

• Solder dip 275 °C max., 10 s per JESD 22-B106

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

MBR20H150CT

TO-262AA

MBRF20H150CT

TYPICAL APPLICATIONS

For use in high frequency inverters, freewheeling, and

polarity protection applications.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

SB20H150CT-1

Base P/N-E3 - RoHS compliant and commercial grade

PIN 1

PIN 2

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

CASE

PIN 3

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

PRIMARY CHARACTERISTICS

Mounting Torque: 10 in-lbs maximum

I_F(AV)

V_RRM

I_FSM

2 x 10 A

150 V

200 A

V_F

0.75 V

175 °C

T_Jmax.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR20H150CT

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

V_RRM

V_RWM

V_DC

150

Maximum DC blocking voltage

per device

Maximum average forward rectified current

per diode

I_F(AV)

I_FSM

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

200

Peak repetitive reverse current per diode at t_p= 2 μs, 1 kHz

Peak non-repetitive reverse surge energy per diode (8/20 μs waveform)

Non-repetitive avalanche energy per diode at 25 °C, I_AS= 1.5 A, L = 10 mH

Voltage rate of change (rated V_R)

1.0

V/μs

°C

IRRM

E_RSM

E_AS

dV/dt

T_J, T_STG

V_AC

11.25

10 000

- 65 to + 175

1500

Operating junction and storage temperature range

Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min

Revision: 09-Aug-11

Document Number: 88864

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

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与MBR20H150CT_11相关器件

型号	品牌	获取价格	描述	数据表
MBR20H150CT_T0_00001	PANJIT	获取价格	ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
MBR20H150CT-45	KERSEMI	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBR20H150CTE3	VISHAY	获取价格	DIODE 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3, Recti
MBR20H150CT-E3	KERSEMI	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBR20H150CT-E3	VISHAY	获取价格	DIODE 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3, Recti
MBR20H150CT-E3/45	VISHAY	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBR20H150CTG	ONSEMI	获取价格	SWITCHMODE? Power Rectifier 150 V, 20 A
MBR20H150DC	PANJIT	获取价格	ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
MBR20H150DC_R2_00001	PANJIT	获取价格	ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
MBR20H150FAT	PANJIT	获取价格	ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS

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