Schottky Barrier Rectifiers
Comchip
S M D D i o d e s S p e c i a l i s t
MBR20H100FCT-G Thru. MBR20H200FCT-G
Reverse Voltage: 100 to 200 V
Forward Current: 20 A
RoHS Device
Features
-Plastic material used carries underwriters laboratory
ITO-220AB
laboratory classifications 94V-0.
0.189(4.80)
-Guard ring for transient protection.
0.173(4.40)
0.118(3.00)
0.106(2.70)
0.138(3.50)
0.122(3.10)
-Low power loss high efficiency.
0.406(10.30)
0.386( 9.80)
0.118(3.00)
0.102(2.60)
-High current capability, low forward voltage drop.
-High surge capacity.
-For use in power supply-output rectification,
power management, instrumentation.
-Guarding for overvoltage protection.
-High temperature soldering guaranteed:
260°C/10 seconds,0.25”(6.35mm) from case.
0.610(15.50)
0.571(14.50)
0.157(4.00)
0.142(3.60)
Mechanical Data
-Case: JEDEC ITO-220AB, molded plastic body.
0.071(1.80)
0.055(1.40)
0.571(14.50)
0.531(13.50)
-Terminals: Pure tin plated, lead free.Solderable per
MIL-STD-750,Method 2026
0.059(1.50)
0.043(1.10)
-Polarity: As marked
-Mounting position: Any
-Mounting torque: 5in. -1bs.max
-Weight: 2.24 grams
0.030(0.76)
0.020(0.51)
0.112(2.84)
0.088(2.24)
0.030(0.76)
0.020(0.51)
0.114(2.90)
0.098(2.50)
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
MBR
20H100FC-G
MBR
20H150FCT-G
MBR
20H200FCT-G
Symbol
Parameter
Unit
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
100
150
200
V
VRMS
VDC
70
105
150
14
V
V
100
200
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current @ TC=125°C
I(AV)
20.0
20.0
A
A
Peak repetitive forward current (rated VR, square wave,20KHZ)
at TC=125°C
IFRM
Peak Forward Surage Current ,
IFSM
IRRM
8.3ms Single Half Sine-Wave
150
A
A
Super Imposed On Rated Load(JEDEC Method)
Peak Repetitive Reverse Surge Current (Note 1)
1.0
0.5
IF=10A@ TJ= 25°C
0.85
0.75
0.95
0.85
0.88
0.75
0.97
0.85
Maximum Instantaneous forward voltage at:
forward voltage at:
IF=10A@ TJ=125°C
IF=20A@ TJ= 25°C
IF=20A@ TJ=125°C
VF
V
(Note 2)
µA
mA
5
2
Maximum Instantaneous reverse current @ Tc= 25°C at
Rate DC blocking voltage @ Tc= 125°C at (Note 2)
IR
Voltage rate kf change (Rated VR )
Maximum Typical Thermal Resistance (Note3)
Operating Junction Temperature Range
Storage Temperature Range
dV/dt
RθJC
TJ
10000
V/uS
1.50
°C/W
°C
-65 to +175
-65 to +175
TSTG
°C
NOTES:
1. 2.0us Pulse Width, f=1.0 KHz.
2. Pulse test: 300us pulse width, 1% duty cycle.
3. Thermal Resistsnce from junction to case per leg,Mount on heatsink sixe of 2in*3in*0.25in Al-plate.
REV:A
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Comchip Technology CO., LTD.