Datasheet > MBR20H200CT_08

MBR20H200CT_08

更新时间： 2024-02-08 09:18:46

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	128K
描述
Dual Common-Cathode High-Voltage Schottky Rectifier

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MBR20H200CT_08 数据手册

MBR20H200CT, MBRF20H200CT & SB20H200CT-1

Vishay General Semiconductor

Dual Common-Cathode High-Voltage Schottky Rectifier

Low Leakage Current 5.0 µA

FEATURES

TO-220AB

ITO-220AB

• Guarding for overvoltage protection

• Low power loss, high efficiency

• Low forward voltage drop

• High frequency operation

• Solder dip 260 °C, 40 s

MBR20H200CT

MBRF20H200CT

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TO-262AA

TYPICAL APPLICATIONS

For use in high frequency inverters, freewheeling and

polarity protection applications.

SB20H200CT-1

MECHANICAL DATA

PIN 1

PIN 2

CASE

Case: TO-220AB, ITO-220AB, TO-262AA

PIN 3

Epoxy meets UL 94V-0 flammability rating

PRIMARY CHARACTERISTICS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

I_F(AV)

V_RRM

I_FSM

V_F

2 x 10 A

200 V

290 A

0.75 V

175 °C

Mounting Torque: 10 in-lbs maximum

Polarity: As marked

T_J

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

MBR20H200CT

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

200

V_RWM

V_DC

total device

Maximum average forward rectified current

per diode

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

I_FSM

290

Peak repetitive reverse current per diode at t_p= 2 µs, 1 kHz

I_RRM

E_RSM

E_AS

1.0

Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)

Non-repetitive avalanche energy per diode at 25 °C, I_AS= 2.0 A, L = 10 mH

Electrostatic discharge capacitor voltage

human body model air discharge: C = 100 pF, R 0 1.5 kΩ

V_C

Voltage rate of change (rated V_R)

dV/dt

T_J, T_STG

V_AC

10 000

- 65 to + 175

1500

V/µs

°C

Operating junction and storage temperature range

Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 minute

Document Number: 88786

Revision: 18-Apr-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

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MBR20H200CT_T0_00001	PANJIT	获取价格	Low power loss, high efficiency.
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MBR20H200CTE3	VISHAY	获取价格	DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3, Recti
MBR20H200CT-E3	KERSEMI	获取价格	Guarding for overvoltage protection
MBR20H200CT-E3	VISHAY	获取价格	DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3, Recti
MBR20H200CT-E3/45	VISHAY	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
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