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MBR20H150CT-E3 PDF预览

MBR20H150CT-E3

更新时间: 2024-02-20 15:08:40
品牌 Logo 应用领域
威世 - VISHAY 局域网功效瞄准线二极管
页数 文件大小 规格书
5页 289K
描述
DIODE 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3, Rectifier Diode

MBR20H150CT-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.49
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.75 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:200 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:150 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

MBR20H150CT-E3 数据手册

 浏览型号MBR20H150CT-E3的Datasheet PDF文件第2页浏览型号MBR20H150CT-E3的Datasheet PDF文件第3页浏览型号MBR20H150CT-E3的Datasheet PDF文件第4页浏览型号MBR20H150CT-E3的Datasheet PDF文件第5页 
MBR20H150CT, MBRF20H150CT & SB20H150CT-1  
Vishay Semiconductors  
Dual Common-Cathode High-Voltage Schottky Rectifier  
Low Leakage Current 5.0 µA  
TO-220AB  
ITO-220AB  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
VF  
2 x 10 A  
150 V  
3
3
2
2
1
1
200 A  
MBR10H150CT  
MBRF10H150CT  
0.75 V  
175 °C  
TO-262AA  
Tj  
Features  
3
2
• Guardring for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
1
SB10H150CT-1  
PIN 1  
PIN 3  
PIN 2  
CASE  
• High frequency operation  
• Solder Dip 260 °C, 40 seconds  
Mechanical Data  
Typical Applications  
Case: TO-220AB, ITO-220AB, TO-262AA  
Epoxy meets UL-94V-0 Flammability rating  
For use in high frequency inverters, free wheeling and  
polarity protection applications  
Terminals: Matte Tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
Mounting Torque: 10 in-lbs maximum  
Polarity: As marked  
Maximum Ratings  
(TC = 25 °C, unless otherwise noted)  
Parameter  
Symbol  
VRRM  
VRWM  
VDC  
MBR20H150CT  
Unit  
V
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
150  
150  
150  
V
V
Maximum average forward rectified current  
Total device  
Per leg  
IF(AV)  
20  
10  
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load per leg  
Peak repetitive reverse current per leg at tp = 2 µs, 1 KHz  
IFSM  
200  
A
IRRM  
ERSM  
EAS  
1.0  
10  
A
mJ  
mJ  
V/µs  
°C  
Peak non-repetitive reverse surge energy per leg (8/20 µs waveform)  
Non-repetitive avalanche energy per leg at 25 °C, IAS = 1.5 A, L = 10 mH  
Voltage rate of change (rated VR)  
11.25  
dv/dt  
10000  
- 65 to + 175  
1500  
Operating junction and storage temperature range  
TJ, TSTG  
VAC  
Isolation voltage (ITO-220AB only)  
V
From terminals to heatsink t = 1 minute  
Document Number 88864  
29-Aug-05  
www.vishay.com  
1

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