Datasheet > MBR20H100CT-E1

MBR20H100CT-E1

更新时间： 2024-02-18 15:44:30

品牌	Logo	应用领域
BCDSEMI		高压高电压电源
页数	文件大小	规格书
11页	635K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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MBR20H100CT-E1 数据手册

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MBR20H100C

General Description

Main Product Characteristics

High voltage dual Schottky rectifier suited for switch

mode power supplies and other power converters. This

device is intended for use in medium voltage opera-

tion, and particularly, in high frequency circuits where

low switching losses and low noise are required.

I_{F (AV)}

V_RRM

T_J

2×10A

100V

175^oC

0.64V

V_F(max)

MBR20H100C is available in TO-220F-3, TO-220-3

and TO-220-3 (2) packages.

Mechanical Characteristics

Features

Case: Epoxy, Molded

Low Forward Voltage: 0.64V @ 125^oC

High Surge Capacity

Epoxy Meets UL 94V-0 @ 0.125in.

Weight (Approximately):

2Grams (TO-220-3, TO-220-3 (2) and

TO-220F-3)

175 C Operating Junction Temperature

20A Total (10A Each Diode Leg)

Guard-ring for Stress Protection

Pb-free Package

Finish: All External Surfaces Corrosion Resistant

and Terminal

Leads are Readily Solderable

Lead Temperature for Soldering Purposes:

260 C Maximum for 10 Seconds

Applications

Power Supply Output Rectification

Power Management

Instrumentation

TO-220F-3

TO-220-3 (Optional)

TO-220-3(2)

Figure 1. Package Types of MBR20H100C

Mar. 2011 Rev. 1. 4

BCD Semiconductor Manufacturing Limited

12 3 4 5 6 7...11

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