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MBR20H100CTG-HE3/45 PDF预览

MBR20H100CTG-HE3/45

更新时间： 2023-06-15 00:00:00
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 400K
描述
DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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MBR20H100CTG-HE3/45 数据手册

 浏览型号MBR20H100CTG-HE3/45的Datasheet PDF文件第2页浏览型号MBR20H100CTG-HE3/45的Datasheet PDF文件第3页浏览型号MBR20H100CTG-HE3/45的Datasheet PDF文件第4页 
MBR20H90CTG & MBR20H100CTG  
Vishay General Semiconductor  
Dual Common-Cathode High-Voltage Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• Guardring for overvoltage protection  
TO-220AB  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
3
2
• High frequency operation  
1
MBR20H90CTG  
MBR20H100CTG  
• Solder dip 260 °C, 40 s  
PIN 1  
PIN 3  
PIN 2  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
CASE  
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching  
mode power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
VF  
10 A x 2  
MECHANICAL DATA  
Case: TO-220AB  
90 V, 100 V  
150 A  
Epoxy meets UL 94V-0 flammability rating  
0.70 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
IR  
3.5 µA  
TJ max.  
175 °C  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
MBR20H90CTG MBR20H100CTG  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
90  
90  
90  
100  
100  
100  
V
V
V
total device  
per diode  
20  
10  
Maximum average forward rectified current at TC = 155 °C  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
150  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
0.5  
A
10 000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
Document Number: 88856  
Revision: 25-Mar-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
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