Datasheet > MBR20H100CT-E3/45

MBR20H100CT-E3/45

更新时间： 2024-01-01 02:40:51

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	507K
描述
Dual Common-Cathode High-Voltage Schottky Rectifier

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MBR(F,B)20H90CT & MBR(F,B)20H100CT

Vishay General Semiconductor

Dual Common-Cathode High-Voltage Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

TO-220AB

ITO-220AB

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

MBR20H90CT

MBR20H100CT

MBRF20H90CT

MBRF20H100CT

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

PIN 1

PIN 2

PIN 1

PIN 2

CASE

PIN 3

• Solder dip 260 °C, 40 s (for TO-220AB and

ITO-220AB package)

TO-263AB

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

MBRB20H90CT

For use in high frequency rectifier of switching

mode power supplies, freewheeling diodes, dc-to-dc

converters or polarity protection application.

MBRB20H100CT

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

I_R

10 A x 2

90 V, 100 V

250 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

4.5 µA

V_F

0.64 V

T_Jmax.

175 °C

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR20H90CT

MBR20H100CT

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

V_RRM

100

V_RWM

V_DC

total device

per diode

Maximum average forward rectified current

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

250

1.0

Peak repetitive reverse current per diode at t_p= 2 µs, 1 kHz

Voltage rate of change (rated V_R)

I_RRM

dV/dt

10 000

V/µs

°C

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

V_AC

1500

Document Number: 88673

Revision: 08-Nov-07

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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与MBR20H100CT-E3/45相关器件

型号	品牌	获取价格	描述	数据表
MBR20H100CTF-E1	KERSEMI	获取价格	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20H100CTF-E1	BCDSEMI	获取价格	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20H100CTF-G1	BCDSEMI	获取价格	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20H100CTF-G1	KERSEMI	获取价格	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20H100CTG	KERSEMI	获取价格	SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS
MBR20H100CTG	VISHAY	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBR20H100CTG	ONSEMI	获取价格	SWITCHMODE Power Rectifier 100 V, 20 A
MBR20H100CTG/45	VISHAY	获取价格	Rectifier Diode, Schottky, 10A, 100V V(RRM)
MBR20H100CTG/45-E3	VISHAY	获取价格	DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode
MBR20H100CT-G1	KERSEMI	获取价格	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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