MBR1635 THRU MBR1660
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 35 to 60 V
Forward Current - 16 A
Features
• Metal silicon junction, majority carrier conduction
• Guard ring for overvoltage protection
• High current capability
• Low power loss, high efficiency
• Low forward voltage drop
• For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
Mechanical Data
• Case: Molded plastic, TO-220A
• Epoxy: UL 94V-0 rate flame retardant
• Terminals: Leads solderable per MIL-STD-202
Method 208 guaranteed
• Polarity: As marked
• Mounting position: Any
Maximum Ratings and Electrical Characteristics
O
Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBR1635 MBR1645 MBR1650 MBR1660
Parameter
Symbols
VRRM
Units
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
35
24
35
45
31
45
50
35
50
60
42
60
VRMS
V
Maximum DC Blocking Voltage
VDC
V
Maximum Average Forward Rectified Current
IF(AV)
IFRM
16
32
A
A
O
TC = 125 C
O
Peak Repetitive Forward Current at TC = 125 C
(Rated VR, Sq. Wave, 20 KHz)
Peak Forward Surge Current, 8.3 ms Single Half Sine
Wave Superimposed on Rated Load (JEDEC Method)
IFSM
IRRM
VF
150
A
A
V
Peak Repetitive Reverse Current at tp = 2 µs, 1 KHz
1
0.5
O
at IF = 16 A, TC = 25 C
0.63
0.57
0.2
0.75
0.65
1
Maximum Forward Voltage 1)
O
at IF = 16 A, TC = 125 C
O
Maximum Reverse Current at Rated DC at TC = 25 C
IR
mA
O
Blocking Voltage
at TC = 125 C
40
50
Voltage Rate of Change (Rated VR)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
dv/dt
RθJC
TJ
10,000
1.5
V/µs
O
C/W
O
C
- 55 to + 150
- 55 to + 175
O
C
TS
1) Pulse test: 300 µs pulse width, 1% duty cycle
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 29/08/2007
H