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MBR1645-HE3/45 PDF预览

MBR1645-HE3/45

更新时间: 2024-01-28 03:15:58
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
5页 475K
描述
DIODE 16 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode

MBR1645-HE3/45 数据手册

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MBR(F,B)1635 thru MBR(F,B)1660  
Vishay General Semiconductor  
Schottky Barrier Rectifier  
FEATURES  
ITO-220AC  
TO-220AC  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
2
2
1
1
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
MBR16xx  
PIN 1  
MBRF16xx  
PIN 1  
CASE  
PIN 2  
• Solder dip 260 °C, 40 s (for TO-220AC and  
ITO-220AC package)  
PIN 2  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
2
TYPICAL APPLICATIONS  
1
MBRB16xx  
For use in low voltage, high frequency rectifier  
of switching mode power supplies, freewheeling  
diodes, dc-to-dc converters and polarity protection  
application.  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AC, ITO-220AC, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
PRIMARY CHARACTERISTICS  
IF(AV)  
16 A  
VRRM  
IFSM  
35 V to 60 V  
150 A  
VF  
0.57 V, 0.65 V  
150 °C  
TJ max.  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL MBR1635  
MBR1645  
MBR1650  
MBR1660  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TC = 125 °C  
IF(AV)  
16  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
TJ  
1.0  
0.5  
A
V/µs  
°C  
10 000  
Operating junction temperature range  
Storage temperature range  
- 65 to + 150  
- 65 to + 175  
TSTG  
°C  
Isolation voltage (ITO-220AC only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
V
Document Number: 88671  
Revision: 08-Nov-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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