MBR1635, MBR1645,
MBRB1645
MBR1645 is a Preferred Device
SWITCHMODEE
Power Rectifiers
16 A, 35 and 45 V
These state−of−the−art devices use the Schottky Barrier principle
http://onsemi.com
with a platinum barrier metal.
MARKING
DIAGRAMS
Features
4
• Guard−ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Pb−Free Packages are Available
TO−220AC
CASE 221B
PLASTIC
AYWWG
B16x5
KA
Mechanical Characteristics:
• Case: Epoxy, Molded
1
3
1, 4
3
• Weight: 1.9 Grams for TO−220
2
1.7 Grams for D PAK
A
Y
= Assembly Location
= Year
= Work Week
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
WW
B16x5 = Device Code
x
KA
G
= 3 or 4
= Diode Polarity
= Pb−Free Package
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
2
D PAK
B1645G
AYWW
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
RRM
RWM
4
CASE 418B
STYLE 3
MBR1635
MBR1645
MBRB1645
V
R
35
45
45
1
3
1
4
3
Average Rectified Forward Current Delay
(Rated V , T = 163°C) Total Device
I
A
A
F(AV)
16
32
R
C
B1645 = Device Code
Peak Repetitive Forward Current, Per
Leg
(Rated V , Square Wave,
I
FRM
A
Y
WW
G
= Assembly Location
= Year
R
= Work Week
= Pb−Free Package
20 kHz, T = 157°C) Total Device
C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
150
1.0
A
A
FSM
ORDERING INFORMATION
Device
Package
Shipping
Peak Repetitive Reverse Surge Current
(2.0 ms, 1.0 kHz)
I
RRM
MBR1635
TO−220
50 Units / Rail
50 Units / Rail
MBR1635G
TO−220
Storage Temperature Range
T
−65 to +175
−65 to +175
10,000
°C
°C
stg
(Pb−Free)
Operating Junction Temperature (Note 1)
T
J
MBR1645
TO−220
50 Units / Rail
50 Units / Rail
Voltage Rate of Change (Rated V )
dv/dt
V/ms
R
MBR1645G
TO−220
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Pb−Free)
2
MBRB1645T4G
D PAK
800 Units / Rail
(Pb−Free)
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
June, 2008 − Rev. 11
MBR1635/D