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MBR150G

更新时间： 2024-11-26 04:41:07
品牌 Logo 应用领域
安森美 - ONSEMI 二极管瞄准线
页数 文件大小 规格书
5页 67K
描述
Axial Lead Rectifiers

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MBR150G 数据手册

 浏览型号MBR150G的Datasheet PDF文件第2页浏览型号MBR150G的Datasheet PDF文件第3页浏览型号MBR150G的Datasheet PDF文件第4页浏览型号MBR150G的Datasheet PDF文件第5页 
MBR150, MBR160  
MBR160 is a Preferred Device  
Axial Lead Rectifiers  
The MBR150/160 series employs the Schottky Barrier principle in a  
large area metal−to−silicon power diode. State−of−the−art geometry  
features epitaxial construction with oxide passivation and metal  
overlap contact. Ideally suited for use as rectifiers in low−voltage,  
high−frequency inverters, free wheeling diodes, and polarity  
protection diodes.  
http://onsemi.com  
Features  
SCHOTTKY BARRIER  
RECTIFIERS  
1.0 AMPERE − 50 AND 60 VOLTS  
• Low Reverse Current  
• Low Stored Charge, Majority Carrier Conduction  
• Low Power Loss/High Efficiency  
• Highly Stable Oxide Passivated Junction  
• These are Pb−Free Devices*  
Mechanical Characteristics:  
• Case: Epoxy, Molded  
• Weight: 0.4 Gram (Approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
• Lead Temperature for Soldering Purposes:  
DO−41  
AXIAL LEAD  
CASE 59  
260°C Max. for 10 Seconds  
• Polarity: Cathode Indicated by Polarity Band  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
V
V
RRM  
MBR150  
MBR160  
50  
60  
MARKING DIAGRAM  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
RWM  
V
R
RMS Reverse Voltage  
MBR150  
MBR160  
V
35  
42  
V
A
R(RMS)  
Average Rectified Forward Current (Note 1)  
I
1.0  
O
(V  
R
q
v 0.2 V (dc), T = 90°C,  
R(equiv)  
R
L
A
= 80°C/W, P.C. Board Mounting, T = 55°C)  
MBR1x0  
YYWW G  
G
JA  
A
Nonrepetitive Peak Surge Current  
(Surge applied at rated load conditions,  
halfwave, single phase, 60 Hz, T = 70°C)  
I
25  
(for one  
cycle)  
A
FSM  
L
Operating and Storage Junction Temperature  
Range (Reverse Voltage Applied)  
T , T  
− 65 to  
+150  
°C  
J
stg  
A
= Assembly Location  
THERMAL CHARACTERISTICS (Notes 1 and 2)  
MBR1x0 = Device Code  
x = 5 or 6  
Characteristic  
Symbol  
Max  
Unit  
Y
= Year  
= Work Week  
= Pb−Free Package  
Thermal Resistance, Junction−to−Ambient  
R
80  
°C/W  
q
JA  
WW  
G
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Lead Temperature reference is cathode lead 1/32″ from case.  
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
June, 2006 − Rev. 8  
MBR150/D  
 
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MBR150G 替代型号

型号 品牌 替代类型 描述 数据表
MBR150RLG ONSEMI

完全替代

 Axial Lead Rectifiers
MBR150RL ONSEMI

完全替代

 Axial Lead Rectifiers
MBR150 ONSEMI

完全替代

 Axial Lead Rectifiers

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