MBR150

更新时间： 2024-02-07 13:10:49

品牌	Logo	应用领域
安森美 - ONSEMI		二极管瞄准线
页数	文件大小	规格书
5页	67K
描述
Axial Lead Rectifiers

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技术参数
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MBR150 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	DO-41
包装说明：	O-PALF-W2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.19
Is Samacsys：	N	其他特性：	HIGH RELIABILITY, FREE WHEELING DIODE
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JEDEC-95代码：	DO-204AL	JESD-30 代码：	O-PALF-W2
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-40 °C
最大输出电流：	1 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
最大重复峰值反向电压：	50 V	表面贴装：	NO
技术：	SCHOTTKY	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MBR150 数据手册

MBR150, MBR160

MBR160 is a Preferred Device

Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a

large area metal−to−silicon power diode. State−of−the−art geometry

features epitaxial construction with oxide passivation and metal

overlap contact. Ideally suited for use as rectifiers in low−voltage,

high−frequency inverters, free wheeling diodes, and polarity

protection diodes.

http://onsemi.com

Features

SCHOTTKY BARRIER

RECTIFIERS

1.0 AMPERE − 50 AND 60 VOLTS

• Low Reverse Current

• Low Stored Charge, Majority Carrier Conduction

• Low Power Loss/High Efficiency

• Highly Stable Oxide Passivated Junction

• These are Pb−Free Devices*

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 0.4 Gram (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead Temperature for Soldering Purposes:

DO−41

AXIAL LEAD

CASE 59

260°C Max. for 10 Seconds

• Polarity: Cathode Indicated by Polarity Band

STYLE 1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

RRM

MBR150

MBR160

MARKING DIAGRAM

Working Peak Reverse Voltage

DC Blocking Voltage

RWM

RMS Reverse Voltage

MBR150

MBR160

R(RMS)

Average Rectified Forward Current (Note 1)

1.0

v 0.2 V (dc), T = 90°C,

R(equiv)

= 80°C/W, P.C. Board Mounting, T = 55°C)

MBR1x0

YYWW G

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions,

halfwave, single phase, 60 Hz, T = 70°C)

(for one

cycle)

FSM

Operating and Storage Junction Temperature

Range (Reverse Voltage Applied)

T , T

− 65 to

+150

°C

stg

= Assembly Location

THERMAL CHARACTERISTICS (Notes 1 and 2)

MBR1x0 = Device Code

x = 5 or 6

Characteristic

Symbol

Max

Unit

= Year

= Work Week

= Pb−Free Package

Thermal Resistance, Junction−to−Ambient

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Lead Temperature reference is cathode lead 1/32″ from case.

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

June, 2006 − Rev. 8

MBR150/D

12 3 4 5

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