Datasheet > MBR150TR-M3

MBR150TR-M3

更新时间： 2024-11-27 11:12:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	120K
描述
Schottky Rectifier, 1 A

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MBR150TR-M3 数据手册

VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3

www.vishay.com

Vishay Semiconductors

Schottky Rectifier, 1 A

FEATURES

• Low profile, axial leaded outline

• Very low forward voltage drop

• High frequency operation

Cathode

Anode

• High purity, high

temperature

epoxy

encapsulation for enhanced mechanical strength

and moisture resistance

DO-204AL

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for commercial level

PRODUCT SUMMARY

Package

DO-204AL (DO-41)

1 A

• Halogen-free according to IEC 61249-2-21 definition

(-M3 only)

I_F(AV)

V_R

50 V, 60 V

0.65 V

DESCRIPTION

V_Fat I_F

The VS-MBR... axial leaded Schottky rectifier has been

optimized for very low forward voltage drop, with moderate

leakage. Typical applications are in switching power

supplies, converters, freewheeling diodes, and reverse

battery protection.

_RMmax.

10.0 mA at 125 °C

150 °C

T_Jmax.

Diode variation

E_AS

Single die

2.0 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

1.0

UNITS

Rectangular waveform

50/60

t_p= 5 μs sine

1 Apk, T_J= 125 °C

Range

150

V_F

0.65

T_J

- 40 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-MBR150

VS-MBR150-M3

VS-MBR160

VS-MBR160-M3 UNITS

Maximum DC reverse voltage

V_R

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

See fig. 4

I_F(AV)

50 % duty cycle at T_C= 75 °C, rectangular waveform

1.0

Maximum peak one cycle

non-repetitive surge current

See fig. 6

5 µs sine or 3 µs rect. pulse

150

Followinganyratedload

condition and with rated

I_FSM

V_RRMapplied

10 ms sine or 6 ms rect. pulse

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 1 A, L = 4 mH

2.0

Current decaying linearly to zero in 1 μs

Frequency limited by, T_Jmaximum V_A= 1.5 x V_Rtypical

1.0

Revision: 20-Sep-11

Document Number: 93439

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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与MBR150TR-M3相关器件

型号	品牌	获取价格	描述	数据表
MBR150TRPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
MBR151	DCCOM	获取价格	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
MBR1510	DCCOM	获取价格	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
MBR1510	HY	获取价格	SILICON BRIDGE RECTIFIERS
MBR1510	GOOD-ARK	获取价格	SILICON BRIDGE RECTIFIERS
MBR15100	LUNSURE	获取价格	15Amp schottky barrier rectifier 20to100 volts
MBR15100	KERSEMI	获取价格	Metal of siliconrectifier, majonty carrier conducton
MBR15100	MCC	获取价格	15 Amp Schottky Barrier Rectifier 20 to 100 Volts
MBR15100	MICROSEMI	获取价格	16 AMP SCHOTTKY RECTIFIER
MBR15100	LGE	获取价格	肖特基二极管

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