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MBR150-M3

更新时间： 2024-11-25 11:12:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 120K
描述
Schottky Rectifier, 1 A

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MBR150-M3 数据手册

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VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 1 A  
FEATURES  
• Low profile, axial leaded outline  
• Very low forward voltage drop  
• High frequency operation  
Cathode  
Anode  
• High purity, high  
temperature  
epoxy  
encapsulation for enhanced mechanical strength  
and moisture resistance  
DO-204AL  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for commercial level  
PRODUCT SUMMARY  
Package  
DO-204AL (DO-41)  
1 A  
• Halogen-free according to IEC 61249-2-21 definition  
(-M3 only)  
IF(AV)  
VR  
50 V, 60 V  
0.65 V  
DESCRIPTION  
VF at IF  
The VS-MBR... axial leaded Schottky rectifier has been  
optimized for very low forward voltage drop, with moderate  
leakage. Typical applications are in switching power  
supplies, converters, freewheeling diodes, and reverse  
battery protection.  
I
RM max.  
10.0 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Single die  
2.0 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
1.0  
UNITS  
Rectangular waveform  
A
V
50/60  
tp = 5 μs sine  
1 Apk, TJ = 125 °C  
Range  
150  
A
VF  
0.65  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-MBR150  
VS-MBR150-M3  
VS-MBR160  
VS-MBR160-M3 UNITS  
Maximum DC reverse voltage  
VR  
50  
50  
60  
60  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
See fig. 4  
IF(AV)  
50 % duty cycle at TC = 75 °C, rectangular waveform  
1.0  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 6  
5 µs sine or 3 µs rect. pulse  
150  
Followinganyratedload  
condition and with rated  
IFSM  
VRRM applied  
10 ms sine or 6 ms rect. pulse  
25  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1 A, L = 4 mH  
2.0  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by, TJ maximum VA = 1.5 x VR typical  
1.0  
Revision: 20-Sep-11  
Document Number: 93439  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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