Datasheet > MBR10200CTR

MBR10200CTR

更新时间： 2024-01-27 17:05:24

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	848K
描述
10 Ampere Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBR10200CTR 数据手册

MBR10100CTR thru MBR10200CTR

MBR10100CTR/MBR10150CTR/MBR10200CTR

Pb Free Plating Product

10 Ampere Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

Unit : inch (mm)

TO-220AB

Features

.419(10.66)

.387(9.85)

.196(5.00)

.163(4.16)

ꢀ HMBR matured technology with high reliablity

.139(3.55)

MIN

.054(1.39)

.045(1.15)

ꢀ Low forward voltage drop

ꢀ High current capability

ꢀ Low reverse leakage current

ꢀ High surge current capability

Application

Automotive Inverters/Solar Inverters

ꢀ

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

.038(0.96)

.019(0.50)

.025(0.65)MAX

Mechanical Data

ꢀ Case: Heatsink TO-220AB

.1(2.54)

ꢀ Epoxy: UL 94V-0 rate flame retardant

ꢀ

method 208

Terminals: Solderable per MIL-STD-202

ꢀ Polarity: As marked on diode body

ꢀ Mounting position: Any

ꢀ Weight: 2.0 gram approximately

Case

Doubler

Series

Negative

Positive

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "CTD" Suffix "CTS"

Suffix "CT"

Suffix "CTR"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

SYMBOL

UNIT

MBR10100CTR MBR10150CTR MBR10200CTR

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated VR, Square Wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

I_RRM

120

Peak repetitive reverse surge current (Note 1)

1.0

0.5

Maximum instantaneous forward voltage (Note 2)

I_F= 5A, T_J=25℃

0.85

0.75

0.95

0.85

0.88

0.75

0.97

0.85

I_F= 5A, T_J=125℃

V_F

I_F=10A, T_J=25℃

I_F=10A, T_J=125℃

Maximum reverse current @ rated VR

T_J=25 ℃

I_R

μA

T_J=125 ℃

Voltage rate of change (Rated V_R)

Typical thermal resistance

10000

1.5

dV/dt

R_θJC

T_J

V/μs

C/W

Operating junction temperature range

Storage temperature range

- 55 to +175

T_STG

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

Rev.07C

Page 1/2

http://www.thinkisemi.com/

中文翻译

下载PDF

与MBR10200CTR相关器件

型号	品牌	获取价格	描述	数据表
MBR10200CTS	YANGJIE	获取价格	TO-220AB
MBR10200CT-Y	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBR10200D1	SECOS	获取价格	10.0 Amp Schottky Barrier Rectifiers
MBR10200D1-C	SECOS	获取价格	10.0 Amp Schottky Barrier Rectifiers
MBR10200DC	PANJIT	获取价格	D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
MBR10200DCT	NIUHANG	获取价格	SCHOTTKY RECTIFIERS
MBR10200DD	NIUHANG	获取价格	SCHOTTKY RECTIFIERS
MBR10200DFCT	NIUHANG	获取价格	SCHOTTKY RECTIFIERS
MBR10200DS	YFW	获取价格	Surface Mount Schottky Barrier Rectifier
MBR10200DT	JUXING	获取价格	Surface Mount Schottky Rectifiers