RoHS
MBR1080FCTA THRU MBR10200FCTA
Schottky Diodes
COMPLIANT
Features
● High frequency operation
● Low forward voltage drop
● High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
● Guard ring for enhanced ruggedness and long term reliability
● Solder dip 275 °C max. 7 s, per JESD 22-B106
Typical Applications
Typical applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Mechanical Data
●
ackage: ITO-220AB
P
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
● Polarity: As marked
(T =25℃Unless otherwise specified)
■
Maximum Ratings
j
MBR1080FCTA
MBR1080FCTA
80
MBR10100FCTA MBR10120FCTA MBR10150FCTA MBR10200FCTA
PARAMETER
SYMBOLUNIT
MBR10100FCTA MBR10120FCTA MBR10150FCTA MBR10200FCTA
Device marking code
V
Repetitive Peak Reverse Voltage
Average Rectified Output Current
V
A
100
120
150
200
RRM
I
@60Hz sine wave, R-load, T
c
O
10
(FIG.1)
Surge(Non-repetitive)Forward
Current @60Hz half sine-wave,
I
A
FSM
I2t
150
94
1 cycle, T =25℃
j
Current Squared Time
@1ms≤t≤8.3ms Tj=25℃
A2s
℃
Storage Temperature
Junction Temperature
T
stg
-55 ~ +175
-55 ~ +175
T
j
℃
(T =25℃Unless otherwise specified)
■Electrical Characteristics
j
TEST
MBR1080FCTAMBR10100FCTAMBR10120FCTAMBR10150FCTAMBR10200FCTA
PARAMETER
SYMBOL
UNIT
CONDITIONS
I =5.0A
FM
Maximum instantaneous
forward voltage drop per
diode
V
V
FM
0.8
0.85
0.9
V
=V
RM RRM
I
0.1
20
RRM1
Maximum DC reverse current
at rated DC blocking voltage
per diode
T=25℃
j
mA
V
=V
RM RRM
I
RRM2
T=100℃
j
Note1:Pulse test:300uS pulse widh,1% duty cycle
Note2:Pulse test:pulse widh 40mS
1 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-B877
www.21yangjie.com
Rev.1.2,29-Jul-23