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MBR10200FCT PDF预览

MBR10200FCT

更新时间: 2024-01-31 16:16:25
品牌 Logo 应用领域
SIRECTIFIER 二极管瞄准线功效局域网
页数 文件大小 规格书
2页 47K
描述

MBR10200FCT 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:1.17
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.88 V
JEDEC-95代码:TO-277BJESD-30 代码:R-PDSO-F3
最大非重复峰值正向电流:180 A元件数量:1
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:200 V
最大反向电流:100 µA表面贴装:YES
技术:SCHOTTKY端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBR10200FCT 数据手册

 浏览型号MBR10200FCT的Datasheet PDF文件第2页 
MBR10200FCT  
Power Schottky Rectifier - 10Amp 200Volt  
Features  
-Plastic package has Underwriters Laboratory Flammability Classifications 94V-0  
-High Junction Temperature Capability  
-Low forward voltage, high current capability  
-High surge capacity  
-Low power loss, high efficiency  
ITO-220AB  
L
B
M
Application  
C
K
-AC/DC Switching Adaptor and other Switching Power Supply  
D
A
Absolute maximum ratings  
E
F
Symbol  
IF(AV)  
Ratings  
10  
Unit  
A
Conditions  
At Tc=125ºC  
G
Maximum repetitive peak  
reverse voltage  
I
J
200  
120  
V
A
VRRM  
IFSM  
N
8.3ms single half sine-wafe  
single shot  
H
H
A1  
A2  
K
0.95  
V
At IF=5A, Tc=25ºC  
VF(max)  
Tj  
ºC  
ºC  
-50 to +175  
-50 to +150  
Tstg  
DIMENSIONS  
INCHES  
MIN  
MM  
DIM  
NOTE  
Electrical characteristics  
MAX  
.600  
.406  
.114  
.274  
.331  
.159  
.531  
.100  
.028  
.028  
.138  
.185  
.063  
.114  
MIN  
MAX  
A
B
C
D
E
F
G
H
I
.577  
.386  
.102  
.258  
.315  
.148  
.508  
.089  
.022  
.022  
.126  
.173  
.055  
.102  
14.65 15.25  
9.80  
2.60  
6.55  
8.00  
3.75  
10.30  
2.90  
6.95  
8.40  
4.05  
Parameters  
Symbol  
VF  
Ratings  
Conditions  
Maximum Instantaneous  
Forward Voltage  
0.95V  
0.80V  
50µA  
15mA  
Tc=25ºC  
Tc=125ºC  
Tc=25ºC  
Tc=125ºC  
12.90 13.50  
Maximum Reverse Current At  
Rated DC Blocking Voltage  
2.25  
0.55  
0.55  
3.20  
4.40  
1.40  
2.60  
2.55  
0.70  
0.70  
3.50  
4.70  
1.60  
2.90  
IR  
J
Voltage Rate of Change  
Typical Thermal Resistance,  
Junction to Case  
dv/dt 10,000 V/µs  
4.5 ºC/W  
Rated VR  
K
L
M
N
Per diode  
Rth (j-c)  
Note: (1)Pulse Test : 380µs pulse width, 2% duty cycle  
April 2004  
http://www.sirectifier.com  
1

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