Datasheet > MBR10200CTF-E1

MBR10200CTF-E1

更新时间： 2024-11-14 01:09:31

品牌	Logo	应用领域
BCDSEMI		高电压电源高压
页数	文件大小	规格书
11页	682K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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MBR10200CTF-E1 数据手册

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MBR10200C

General Description

Main Product Characteristics

High voltage dual schottky rectifier suited for switch

mode power supplies and other power converters. This

device is intended for use in medium voltage opera-

tion, and particularly, in high frequency circuits where

low switching losses and low noise are required.

2×5A

F(AV)

200V

RRM

150 C

V (max)

0.85V

MBR10200C is available in TO-220-3, TO-220-3 (2)

and TO-220F-3 packages.

Features

Mechanical Characteristics

High Surge Capacity

Case: Epoxy, Molded

150 C Operating Junction Temperature

Epoxy Meets UL 94V-0 @ 0.125in.

Weight (Approximately):

10A Total (5A Each Diode Leg)

Guard-ring for Stress Protection

Pb-free Package

1.9Grams (TO-220-3, TO-220-3 (2) and

TO-220F-3)

Finish: All External Surfaces Corrosion Resistant

and Terminal

Leads are Readily Solderable

Lead Temperature for Soldering Purposes:

Applications

Power Supply Output Rectification

Power Management

Instrumentation

260 C Maximum for 10 Seconds

TO-220F-3

TO-220-3(Optional)

TO-220-3 (2)

Figure 1. Package Types of MBR10200C

Mar. 2011 Rev. 1. 4

BCD Semiconductor Manufacturing Limited

12 3 4 5 6 7...11

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