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MBM29F016A PDF预览

MBM29F016A

更新时间: 2024-11-10 22:58:07
品牌 Logo 应用领域
富士通 - FUJITSU /
页数 文件大小 规格书
43页 441K
描述
16M (2M X 8) BIT

MBM29F016A 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20844-4E  
FLASH MEMORY  
CMOS  
16M (2M × 8) BIT  
MBM29F016A-70/-90/-12  
FEATURES  
• Single 5.0 V read, write, and erase  
Minimizes system level power requirements  
• Compatible with JEDEC-standard commands  
Pinout and software compatible with single-power supply Flash  
Superior inadvertent write protection  
• 48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type)  
• Minimum 100,000 write/erase cycles  
• High performance  
70 ns maximum access time  
• Sector erase architecture  
Uniform sectors of 64 K bytes each  
Any combination of sectors can be erased. Also supports full chip erase.  
• Embedded Erase™ Algorithms  
Automatically pre-programs and erases the chip or any sector  
• Embedded Program™ Algorithms  
Automatically programs and verifies data at specified address  
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion  
• Ready/Busy output (RY/BY)  
Hardware method for detection of program or erase cycle completion  
• Low VCC write inhibit 3.2 V  
• Hardware RESET pin  
Resets internal state machine to the read mode  
• Erase Suspend/Resume  
Supports reading or programming data to a sector not being erased  
• Sector group protection  
Hardware method that disables any combination of sector groups from write or erase operation (a sector group  
consists of 4 adjacent sectors of 64 K bytes each)  
• Temporary sector groups unprotection  
Temporary sector unprotection via the RESET pin  
Embedded Erase™, Embedded Program™ and ExpressFlash™ are trademarks of Advanced Micro Devices, Inc.  

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