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MB84VD22388EJ-90-PBS PDF预览

MB84VD22388EJ-90-PBS

更新时间: 2024-01-15 00:14:19
品牌 Logo 应用领域
富士通 - FUJITSU 静态存储器内存集成电路
页数 文件大小 规格书
62页 983K
描述
Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA71, PLASTIC, FBGA-71

MB84VD22388EJ-90-PBS 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA71,8X12,32
针数:71Reach Compliance Code:compliant
HTS代码:8542.32.00.71风险等级:5.28
Is Samacsys:N最长访问时间:90 ns
其他特性:FCRAM IS ORGANIZED AS 1M X 16; IT ALSO REQUIRES 2.7V TO 3.1V SUPPLY FOR FCRAMJESD-30 代码:R-PBGA-B71
JESD-609代码:e0长度:11 mm
内存密度:33554432 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16混合内存类型:FLASH+PSRAM
功能数量:1端子数量:71
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-30 °C组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA71,8X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH峰值回流温度(摄氏度):240
电源:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.000005 A
子类别:Other Memory ICs最大压摆率:0.053 mA
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:TIN LEAD端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:30宽度:7 mm
Base Number Matches:1

MB84VD22388EJ-90-PBS 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-50212-3E  
Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM  
CMOS  
32M (×16) FLASH MEMORY &  
16M (×16) SRAM Interface FCRAM  
MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90  
MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90  
FEATURES  
• Power Supply Voltage of 2.7 V to 3.1 V for FCRAM  
• Power Supply Voltage of 2.7 V to 3.3 V for Flash  
• High Performance  
85 ns maximum access time (Flash)  
85 ns maximum access time (FCRAM)  
• Operating Temperature  
–30 °C to +85 °C  
• Package 71-ball BGA  
(Continued)  
PRODUCT LINE-UP  
Flash Memory  
FCRAM  
Power Supply Voltage (V)  
Max Address Access Time (ns)  
Max CE Access Time (ns)  
Max OE Access Time (ns)  
VCCf* = 2.7 to 3.3  
VCCs* = 2.7 to 3.1  
85  
85  
35  
85  
85  
50  
*: Both VCCf and VCCs must be the same level when either part is being accessed.  
PACKAGE  
71-ball plastic BGA  
(BGA-71P-M02)  
Note : These guarantee both FCRAM and Flash at 85 ns Access Cycle.  

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