是否Rohs认证: | 不符合 | 生命周期: | Contact Manufacturer |
零件包装代码: | BGA | 包装说明: | LFBGA, |
针数: | 73 | Reach Compliance Code: | compliant |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.68 |
其他特性: | STATIC RAM IS ORGANIZED AS 256K X 16 OR 512K X 8; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8 | JESD-30 代码: | R-PBGA-B73 |
JESD-609代码: | e0 | 长度: | 11.6 mm |
内存密度: | 33554432 bit | 内存集成电路类型: | MEMORY CIRCUIT |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 73 | 字数: | 2097152 words |
字数代码: | 2000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
组织: | 2MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | LFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, LOW PROFILE, FINE PITCH | 认证状态: | Not Qualified |
座面最大高度: | 1.4 mm | 最大供电电压 (Vsup): | 3.3 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 宽度: | 8 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MB84VD22183EE-85-PBS | FUJITSU |
获取价格 |
SPECIALTY MEMORY CIRCUIT, PBGA73, PLASTIC, FBGA-73 | |
MB84VD22183EE-90 | FUJITSU |
获取价格 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM | |
MB84VD22183EE-90-PBS | FUJITSU |
获取价格 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM | |
MB84VD22183EG | FUJITSU |
获取价格 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM | |
MB84VD22183EG-90 | FUJITSU |
获取价格 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM | |
MB84VD22183EG-90-PBS | FUJITSU |
获取价格 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM | |
MB84VD22183EH | FUJITSU |
获取价格 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM | |
MB84VD22183EH-70PBS | FUJITSU |
获取价格 |
Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA71, PLASTIC, BGA-71 | |
MB84VD22183EH-85PBS | FUJITSU |
获取价格 |
Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA71, PLASTIC, BGA-71 | |
MB84VD22183EH-90 | FUJITSU |
获取价格 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM |