5秒后页面跳转
MB2S PDF预览

MB2S

更新时间: 2024-02-14 11:23:31
品牌 Logo 应用领域
美微科 - MCC 二极管IOT
页数 文件大小 规格书
2页 52K
描述
0.5Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts

MB2S 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.57其他特性:UL RECOGNIZED
最小击穿电压:200 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PDSO-G4
湿度敏感等级:1最大非重复峰值正向电流:35 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大重复峰值反向电压:200 V子类别:Bridge Rectifier Diodes
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

MB2S 数据手册

 浏览型号MB2S的Datasheet PDF文件第2页 
MB05S  
THRU  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆꢄꢃꢋꢌ  
ꢍꢎꢍꢏꢎꢅꢐꢑꢉꢒꢂꢉꢅꢓꢑꢌ  
ꢆꢔꢉꢑꢒꢕꢄꢃꢑꢔꢖꢅꢆꢗꢅꢘꢎꢙꢎꢎ  
ꢚꢔꢄꢛꢈꢜꢅꢝꢞꢎꢞ ꢅ!ꢏꢎ"#ꢘꢙꢙ  
$ꢉ%ꢜꢅ   ꢝꢞꢎꢞ ꢅ!ꢏꢎ"#ꢘꢙꢘ  
MB10S  
0.5Amp Single Phase  
Glass Passivated  
Bridge Rectifier  
Features  
·
·
·
·
Surface Mount Package  
Glass Passivated Diode Construction  
Moisture Resistant Epoxy Case  
High Surge Current Capability  
50 to 1000 Volts  
MBS -1  
Maximum Ratings  
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
-
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Rccurrent  
Peak Reverse  
Voltage  
Maximum Maximum  
D
B
E
RMS  
DC  
+
Voltage  
Blocking  
Voltage  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
F
MB05S  
MB1S  
MB2S  
MB4S  
MB6S  
MB8S  
MB10S  
50V  
35V  
70V  
140V  
280V  
420V  
560V  
700V  
MB05S  
MB1S  
MB2S  
MB4S  
MB6S  
MB8S  
MB10S  
C
A
100V  
200V  
400V  
600V  
800V  
1000V  
Notch in case  
K
M
J
G
L
N
H
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
0.5A  
0.8A  
Note1 TA = 30°C  
Note2 TA = 30°C  
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
ꢂꢂ  
ꢇ ꢇ ꢇ ꢇ ꢁꢄꢈ  
ꢉꢃꢅ  
Maximum  
ꢀꢁꢂ  
ꢂꢁꢄ  
.252  
ꢎꢏꢐꢑ  
ꢒꢎꢔꢑ  
ꢎꢒꢘꢏ  
.017  
.090  
.004  
.021  
.055  
-----  
ꢂꢊꢋ  
.272  
ꢎꢒꢏꢑ  
ꢎꢒꢑꢑ  
ꢎꢒꢐꢏ  
.029  
.106  
.008  
.023  
.065  
.200  
ꢎꢒꢒꢖ  
. 0 5 0  
.014  
ꢂꢁꢄ  
6.40  
ꢓꢎꢔꢒ  
ꢗꢎꢕꢘ  
ꢔꢎꢑꢖ  
0.45  
2.30  
0.10  
0.53  
1.40  
-----  
ꢂꢊꢋ  
6.91  
ꢓꢎꢕꢖ  
ꢗꢎꢐꢔ  
ꢔꢎꢘꢗ  
0.75  
2.70  
0.20  
0.58  
1.65  
5.08  
ꢓꢎꢐꢖ  
1 . 2 7  
0.35  
ꢄꢆꢌꢃ  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.0V  
IFM = 0.5A;  
TA = 25°C  
ꢇ ꢇ  
5 mA  
TA = 25°C  
Typical Junction  
Capacitance  
CJ  
25pF  
Measured at  
1.0MHz, VR=4.0V  
ꢎꢒꢏꢖ  
. 0 4 0  
.008  
ꢓꢎꢖꢓ  
1 . 0 2  
0.15  
M
Note1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts  
Note2. On alum: substrate P.C.B with an rea of 0.8 x 0.8 x 0.25”  
( 20 x 20 x 6.4mm ) mounte on 0.05 x 0.05 “( 13 x 13 mm )  
solder pad.  
*Pulse Test: Pulse Width 300msec, Duty Cycle 1%  
www.mccsemi.com  

与MB2S相关器件

型号 品牌 描述 获取价格 数据表
MB2S/30 VISHAY Bridge Rectifier Diode, 1 Phase, 0.5A, 200V V(RRM), Silicon, TO-269AA, PLASTIC, MBS, 4 PIN

获取价格

MB2S/30-E3 VISHAY DIODE 0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA, PLASTIC, MBS, 4 PIN, Bridge

获取价格

MB2S/80 VISHAY Bridge Rectifier Diode, 0.5A, 200V V(RRM),

获取价格

MB2S_13 VISHAY Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier

获取价格

MB2S_NL FAIRCHILD Bridge Rectifier Diode, 1 Phase, 0.5A, 200V V(RRM), Silicon, SOIC-4

获取价格

MB2-S-30-420-1-A21-B-C Carling Technologies Magnetic Circuit Breaker,

获取价格