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MB2S/80 PDF预览

MB2S/80

更新时间: 2024-11-11 20:47:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
2页 33K
描述
Bridge Rectifier Diode, 0.5A, 200V V(RRM),

MB2S/80 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.8
配置:BRIDGE, 4 ELEMENTS二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-609代码:e0
最大非重复峰值正向电流:35 A元件数量:4
最高工作温度:150 °C最大输出电流:0.5 A
最大重复峰值反向电压:200 V子类别:Bridge Rectifier Diodes
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

MB2S/80 数据手册

 浏览型号MB2S/80的Datasheet PDF文件第2页 
MB2S thru MB6S  
Vishay Semiconductors  
formerly General Semiconductor  
Miniature Glass Passivated Single-Phase  
Surface Mount Bridge Rectifier  
Reverse Voltage 200 to 600V  
Forward Current 0.5A  
TO-269AA (MBS)  
0.029 (0.74)  
0.017 (0.43)  
Mounting Pad Layout  
0.023 MIN.  
(0.58 MIN.)  
0.161 (4.10)  
0.144 (3.65)  
0.272 (6.90)  
0.252 (6.40)  
Dimensions in inches  
and (millimeters)  
0.272 MAX.  
(6.91 MAX.)  
0.030 MIN.  
(0.76 MIN.)  
0.105 (2.67)  
0.095 (2.41)  
0.195 (4.95)  
0.179 (4.55)  
0.205 (5.21)  
0.195 (4.95)  
o
0-8  
0.049 (1.24)  
0.039 (0.99)  
0.105(2.67)  
0.095(2.41)  
0.106 (2.70)  
0.090 (2.30)  
0.062 (1.57)  
0.058 (1.47)  
0.008 (0.20)  
0.004 (0.10)  
0.114 (2.90)  
0.110 (2.80)  
0.058 (1.47)  
0.054 (1.37)  
0.016 (0.41)  
0.0075 (0.19)  
0.0065 (0.16)  
0.114 (2.90)  
0.094 (2.40)  
0.006 (0.15)  
0.018 (0.46)  
0.014 (0.36)  
Features  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
This series is UL recognized under Component Index,  
file number E54214  
Glass passivated chip junctions  
High surge overload rating: 35A peak  
Saves space on printed circuit boards  
High temperature soldering guaranteed: 260°C/10 seconds.  
0.038 (0.96)  
0.019 (0.48)  
Mechanical Data  
Case: Molded plastic body over passivated junctions  
Terminals: Plated leads solderable  
per MIL-STD-750, Method 2026  
Mounting Position: Any Weight: 0.0078 oz., 0.22 g  
Packaging codes-options:  
80-3K per 13" Paper Reel, 36K/carton  
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
MB2S  
MB4S  
MB6S  
Unit  
Device marking code  
2
4
6
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC blocking voltage  
Maximum average forward output rectified current  
(see Fig. 1)  
on glass-epoxy P.C.B.  
on aluminum substrate  
IF(AV)  
0.5(1)  
0.8(2)  
A
Peak forward surge current 8.3msec single half sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
35  
A
Rating for fusing (t < 8.3ms)  
I2t  
RΘJA  
5.0  
A2sec  
85(1)  
Typical thermal resistance per leg  
RΘJA  
RΘJL  
70(2)  
°C/W  
°C  
20(1)  
Operating junction and storage temperature range  
TJ, TSTG  
55 to +150  
Electrical Characteristics(TA = 25°C unless otherwise noted)  
Max. instantaneous forward voltage drop per leg at 0.4A  
VF  
1.0  
V
Maximum DC reverse current at  
rated DC blocking voltage per leg  
TA = 25°C  
TA = 125°C  
5.0  
100  
IR  
µA  
pF  
Typical junction capacitance per leg at 4.0V, 1 MHz  
CJ  
13  
Notes: (1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm) pads  
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20mm) mounted on 0.05 x 0.05" (1.3 x 1.3mm) solder pad  
Document Number 88661  
29-Jul-03  
www.vishay.com  
1

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