Datasheet > MAX2601ESA-T

MAX2601ESA-T

更新时间： 2024-09-17 19:59:23

品牌	Logo	应用领域
美信 - MAXIM		放大器光电二极管晶体管
页数	文件大小	规格书
6页	85K
描述
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PSOP-8

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MAX2601ESA-T 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	SOT
包装说明：	PSOP-8	针数：	8
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.05
最大集电极电流 (IC)：	1.2 A	集电极-发射极最大电压：	15 V
配置：	SINGLE	最小直流电流增益 (hFE)：	100
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e0	湿度敏感等级：	1
元件数量：	1	端子数量：	8
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	245	极性/信道类型：	NPN
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn85Pb15)
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

MAX2601ESA-T 数据手册

19-1185; Rev 3; 9/08

3.6V, 1W RF Power Transistors

for 900MHz Applications

1/MAX602

General Description

____________________________Features

The MAX2601/MAX2602 are RF power transistors opti-

mized for use in portable cellular and wireless equipment

that operates from three NiCd/NiMH cells or one Li-Ion

cell. These transistors deliver 1W of RF power from a

3.6V supply with efficiency of 58% when biased for con-

stant-envelope applications (e.g., FM or FSK). For NADC

(IS-54) operation, they deliver 29dBm with -28dBc ACPR

from a 4.8V supply.

♦ Low Voltage: Operates from 1 Li-Ion or

3 NiCd/NiMH Batteries

♦ DC-to-Microwave Operating Range

♦ 1W Output Power at 900MHz

♦ On-Chip Diode for Accurate Biasing (MAX2602)

♦ Low-Cost Silicon Bipolar Technology

♦ Does Not Require Negative Bias or Supply Switch

♦ High Efficiency: 58%

The MAX2601 is a high-performance silicon bipolar RF

power transistor. The MAX2602 includes a high-

performance silicon bipolar RF power transistor, and a

biasing diode that matches the thermal and process

characteristics of the power transistor. This diode is

used to create a bias network that accurately controls

the power transistor’s collector current as the tempera-

ture changes.

The MAX2601/MAX2602 can be used as the final stage

in a discrete or module power amplifier. Silicon bipolar

technology eliminates the need for voltage inverters

and sequencing circuitry, as required by GaAsFET

power amplifiers. Furthermore, a drain switch is not

required to turn off the MAX2601/MAX2602. This

increases operating time in two ways: it allows lower

system end-of-life battery voltage, and it eliminates the

wasted power from a drain-switch device.

Ordering Information

PART

MAX2601ESA

MAX2602ESA

TEMP RANGE

-40°C to +85°C

PIN-PACKAGE

8 SOIC

The MAX2601/MAX2602 are available in thermally

enhanced, 8-pin SO packages, which are screened to

the extended temperature range (-40°C to +85°C).

________________________Applications

Narrow-Band PCS (NPCS)

915MHz ISM Transmitters

Microcellular GSM (Power Class 5)

AMPS Cellular Phones

Pin Configurations

TOP VIEW

Digital Cellular Phones

BIAS

Two-Way Paging

CDPD Modems

MAX2601

PSOPII

MAX2602

PSOPII

Land Mobile Radios

Typical Application Circuit appears at end of data sheet.

________________________________________________________________ Maxim Integrated Products

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,

or visit Maxim’s website at www.maxim-ic.com.

12 3 4 5 6

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MAX2601ESA-T 替代型号

型号	品牌	替代类型	描述	数据表
MAX2601ESA+T	MAXIM	完全替代	RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PSOP-8

与MAX2601ESA-T相关器件

型号	品牌	获取价格	描述	数据表
MAX2601-MAX2602	MAXIM	获取价格	3.6V, 1W RF Power Transistors for 900MHz Applications
MAX2602	MAXIM	获取价格	Octal.13-Bit Voltage-Output DAC with Parallel Interface[MAX547/MAX547ACMH/MAX547ACMH-T/MAX
MAX2602	ADI	获取价格	3.6V、1W RF功率晶体管，适合900MHz应用
MAX2602_1	MAXIM	获取价格	Evaluation Kit
MAX2602E/D	MAXIM	获取价格	3.6V, 1W RF Power Transistors for 900MHz Applications
MAX2602E/W	MAXIM	获取价格	RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PSOP-8
MAX2602ESA	MAXIM	获取价格	3.6V, 1W RF Power Transistors for 900MHz Applications
MAX2602ESA+	MAXIM	获取价格	暂无描述
MAX2602ESA+T	MAXIM	获取价格	RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PSOP-8
MAX2602ESA-T	MAXIM	获取价格	暂无描述

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