MAX2601ESA+T

更新时间： 2024-01-05 20:49:16

品牌	Logo	应用领域
美信 - MAXIM		晶体射频和微波射频放大器微波放大器晶体管
页数	文件大小	规格书
6页	51K
描述
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PSOP-8

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MAX2601ESA+T 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	SOT
包装说明：	PSOP-8	针数：	8
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.05
最大集电极电流 (IC)：	1.2 A	集电极-发射极最大电压：	15 V
配置：	SINGLE	最小直流电流增益 (hFE)：	100
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e0	湿度敏感等级：	1
元件数量：	1	端子数量：	8
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	245	极性/信道类型：	NPN
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn85Pb15)
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

MAX2601ESA+T 数据手册

19-1185; Rev 2; 5/97

3 .6 V, 1 W RF P o w e r Tra n s is t o rs

fo r 9 0 0 MHz Ap p lic a t io n s

1/MAX602

_______________Ge n e ra l De s c rip t io n

____________________________Fe a t u re s

The MAX2601/MAX2602 are RF power transistors opti-

mized for use in portable cellular and wireless equipment

that operates from three NiCd/NiMH cells or one Li-Ion

cell. These transistors deliver 1W of RF power from a

3.6V supply with efficiency of 58% when biased for con-

stant-envelope applications (e.g., FM or FSK). For NADC

(IS-54) operation, they deliver 29dBm with -28dBc ACPR

from a 4.8V supply.

♦ Low Voltage: Operates from 1 Li-Ion or

3 NiCd/NiMH Batteries

♦ DC-to-Microwave Operating Range

♦ 1W Output Power at 900MHz

♦ On-Chip Diode for Accurate Biasing (MAX2602)

♦ Low-Cost Silicon Bipolar Technology

♦ Does Not Require Negative Bias or Supply Switch

♦ High Efficiency: 58%

The MAX2601 is a high-performance silicon bipolar RF

p owe r tra ns is tor. The MAX2602 inc lud e s a hig h-

performance silicon bipolar RF power transistor, and a

biasing diode that matches the thermal and process

characteristics of the power transistor. This diode is

used to create a bias network that accurately controls

the power transistor’s collector current as the tempera-

ture changes.

The MAX2601/MAX2602 can be used as the final stage

in a discrete or module power amplifier. Silicon bipolar

technology eliminates the need for voltage inverters

and sequencing circuitry, as required by GaAsFET

power amplifiers. Furthermore, a drain switch is not

re q uire d to turn off the MAX2601/MAX2602. This

increases operating time in two ways: it allows lower

system end-of-life battery voltage, and it eliminates the

wasted power from a drain-switch device.

______________Ord e rin g In fo rm a t io n

PART

TEMP. RANGE

-40°C to +85°C

PIN-PACKAGE

8 PSOPII

Dice*

MAX2601ESA

MAX2602ESA

MAX2602E/D

*Dice are specified at T = +25°C, DC parameters only.

The MAX2601/MAX2602 a re a va ila b le in the rma lly

enhanced, 8-pin SO packages, which are screened to

the extended temperature range (-40°C to +85°C). The

MAX2602 is also available in die form.

________________________Ap p lic a t io n s

Narrow-Band PCS (NPCS)

915MHz ISM Transmitters

Microcellular GSM (Power Class 5)

AMPS Cellular Phones

_________________P in Co n fig u ra t io n s

TOP VIEW

Digital Cellular Phones

Two-Way Paging

BIAS

CDPD Modems

MAX2601

MAX2602

Land Mobile Radios

PSOPII

Typical Application Circuit appears at end of data sheet.

________________________________________________________________ Maxim Integrated Products

For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800.

For small orders, phone 408-737-7600 ext. 3468.

12 3 4 5 6

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与MAX2601ESA+T相关器件

型号	品牌	描述	获取价格	数据表
MAX2601ESA-T	MAXIM	RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PSOP-8	获取价格
MAX2601-MAX2602	MAXIM	3.6V, 1W RF Power Transistors for 900MHz Applications	获取价格
MAX2602	MAXIM	Octal.13-Bit Voltage-Output DAC with Parallel Interface[MAX547/MAX547ACMH/MAX547ACMH-T/MAX	获取价格
MAX2602	ADI	3.6V、1W RF功率晶体管，适合900MHz应用	获取价格
MAX2602_1	MAXIM	Evaluation Kit	获取价格
MAX2602E/D	MAXIM	3.6V, 1W RF Power Transistors for 900MHz Applications	获取价格

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