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MASMLG11CAE3TR PDF预览

MASMLG11CAE3TR

更新时间： 2024-09-16 13:24:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管电视
页数 文件大小 规格书
4页 182K
描述
3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, ROHS COMPLIANT, PLASTIC, SMLG, 2 PIN

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中文翻译

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MASMLG11CAE3TR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-215AB
包装说明：R-PDSO-G2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.27
其他特性：HIGH RELIABILITY最大击穿电压：13.5 V
最小击穿电压：12.2 V击穿电压标称值：12.85 V
最大钳位电压：18.2 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-215ABJESD-30 代码：R-PDSO-G2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：3000 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大功率耗散：1.61 W认证状态：Not Qualified
最大重复峰值反向电压：11 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：MATTE TIN端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MASMLG11CAE3TR 数据手册

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TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
SURFACE MOUNT 3000 Watt  
Transient Voltage Suppressor  
- Unidirectional (A) and Bidirectional (CA) construction  
- Available in both J-bend and Gull-wing terminations  
- Selections for 5.0 to 170 V standoff voltages (VWM  
)
LEVELS  
M, MA, MX, MXL  
DEVICES  
MSMLJ5.0A thru MSMLJ170CA, e3  
and MSMLG5.0A thru MSMLG170CA, e3  
FEATURES  
ƒ
ƒ
ƒ
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes specify  
various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote 129  
for more details on the screening options.  
ƒ
Axial-lead equivalent packages for thru-hole mounting available as M5KP5.0A to M5KP110CA with 5000 W  
rating, (consult factory for other surface mount options)  
Refer to table below  
for dimensions  
ƒ
ƒ
ƒ
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS compliant devices available by adding an “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
ƒ
ƒ
ƒ
ƒ
Suppresses transients up to 3000 watts @ 10/1000 µs  
Protection from switching transients and induced RF  
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4  
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:  
o
o
o
Class 1 & 2: MSML5.0A to MSML 170ACA  
Class 3: MSML5.0A to MSML150CA  
Class 4: MSML5.0A to MSML75CA  
ƒ
ƒ
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:  
o
o
o
o
Class 1: MSML5.0A to MSML170CA  
Class 2: MSML5.0A to MSML90CA  
Class 3: MSML5.0A to MSML48CA  
Class 4: MSML5.0A to MSML24CA  
Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:  
o
o
o
Class 2: MSML5.0A to MSML43CA  
Class 3: MSML5.0A to MSML22CA  
Class 4: MSML5.0A to MSML10CA  
MAXIMUM RATINGS  
ƒ
Peak Pulse Power dissipation at 25 ºC: 3000 watts at 10/1000 μs (also see Figures 1,2, and 3) with  
impulse repetition rate (duty factor) of 0.01 % or less  
ƒ
ƒ
ƒ
t
(0 V to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional  
clamping  
Operating and Storage temperature: -65 ºC to +150 ºC  
Thermal resistance: 17.5 ºC/W junction to lead, or 77.5 ºC/W junction to ambient when mounted on FR4  
PC board (1 oz Cu) with recommended footprint Steady-State Power dissipation: 6 watts at TL = 45 ºC, or  
1.61 watts at TA = 25 ºC when mounted on FR4 PC board with recommended footprint (see page 2)  
ƒ
ƒ
Forward Surge at 25 ºC: 200 Amps peak impulse of 8.3 ms half-sine wave (unidirectional only)  
Solder temperatures: 260 ºC for 10 s (maximum)  
RF01003 Rev B, Sept 2011  
High Reliability Product Group  
Page 1 of 4  
1234

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MASMLG120AE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 120V V(RWM), Bidirectional, 1 Element, Silicon, DO-
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 		Trans Voltage Suppressor Diode, 3000W, 120V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MASMLG120CAE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 120V V(RWM), Bidirectional, 1 Element, Silicon, DO-

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