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MAS3132E PDF预览

MAS3132E

更新时间: 2024-11-13 22:30:27
品牌 Logo 应用领域
松下 - PANASONIC 整流二极管开关光电二极管
页数 文件大小 规格书
3页 87K
描述
Switching Diodes

MAS3132E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DFP包装说明:R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.82Is Samacsys:N
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:2
端子数量:3最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大反向恢复时间:0.003 µs
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MAS3132E 数据手册

 浏览型号MAS3132E的Datasheet PDF文件第2页浏览型号MAS3132E的Datasheet PDF文件第3页 
Switching Diodes  
MAS3132E  
Silicon epitaxial planar type  
Unit: mm  
For high-speed switching circuits  
+0.05  
–0.02  
+0.05  
0.10  
–0.02  
0.33  
3
Features  
Two elements are contained in one package, allowing high-  
density mounting  
Short reverse recovery time trr  
+0.05  
1
2
0.23  
–0.02  
(0.40)(0.40)  
0.80 0.05  
1.20 0.05  
Small terminal capacitance Ct  
5˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage  
Maximum peak reverse voltage  
Symbol  
VR  
Rating  
80  
Unit  
V
VRM  
IF  
80  
V
1: Anode 1  
2: Anode 2  
Forward current  
Single  
100  
mA  
3: Cathode 1, 2  
SSSMini3-F1 Package  
Double  
150  
Peak forward current Single  
Double  
IFM  
225  
mA  
mA  
Marking Symbol: MU  
340  
Non-repetitive peak Single  
forward surge current * Double  
Junction temperature  
Storage temperature  
IFSM  
500  
Internal Connection  
750  
3
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
Note) : t = 1 s  
*
1
2
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Forward voltage  
Symbol  
Conditions  
IF = 100 mA  
Min  
Typ  
Max  
Unit  
V
VF  
VR  
IR  
1.2  
Reverse voltage  
IR = 100 µA  
VR = 75 V  
80  
V
Reverse current  
100  
2
nA  
pF  
ns  
Terminal capacitance  
Reverse recovery time *  
Ct  
trr  
VR = 0 V, f = 1 MHz  
IF = 10 mA, VR = 6 V  
3
Irr = 0.1 IR , RL = 100 Ω  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.  
2. Absolute frequency of input and output is 100 MHz.  
3. : trr measurement circuit  
*
Bias Application Unit N-50BU  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 0.1 IR  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
VR = 6 V  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Wave Form Analyzer  
(SAS-8130)  
Rs = 50 Ω  
Ri = 50 Ω  
Publication date: November 2003  
SKF00065BED  
1

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