是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | DO-41 | 包装说明: | PLASTIC, DO-41, 2 PIN |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.64 | 最大击穿电压: | 9.02 V |
最小击穿电压: | 7.38 V | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-204AL |
JESD-30 代码: | O-PALF-W2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 最大非重复峰值反向功率耗散: | 400 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | BIDIRECTIONAL | 最大功率耗散: | 1.13 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 6.63 V |
表面贴装: | NO | 技术: | AVALANCHE |
端子面层: | MATTE TIN | 端子形式: | WIRE |
端子位置: | AXIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MAP4KE8.2CTR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 6.63V V(RWM), Bidirectional, 1 Element, Silicon, DO- | |
MAP4KE8.2E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode | |
MAP4KE8.2E3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MAP4KE8.2TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MAP4KE82 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 66.4V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MAP4KE82A | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MAP4KE82AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MAP4KE82ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MAP4KE82ATRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MAP4KE82C | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 66.4V V(RWM), Bidirectional, 1 Element, Silicon, DO- |