是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.46 |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-609代码: | e3 |
端子面层: | MATTE TIN | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MAP4KE8.2E3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MAP4KE8.2TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MAP4KE82 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 66.4V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MAP4KE82A | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MAP4KE82AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MAP4KE82ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MAP4KE82ATRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MAP4KE82C | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 66.4V V(RWM), Bidirectional, 1 Element, Silicon, DO- | |
MAP4KE82CA | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Bidirectional, 1 Element, Silicon, DO- | |
MAP4KE82CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Bidirectional, 1 Element, Silicon, DO- |