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MAP4KE8.2E3 PDF预览

MAP4KE8.2E3

更新时间: 2024-11-07 07:48:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
6页 428K
描述
Trans Voltage Suppressor Diode

MAP4KE8.2E3 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.46
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码:e3
端子面层:MATTE TINBase Number Matches:1

MAP4KE8.2E3 数据手册

 浏览型号MAP4KE8.2E3的Datasheet PDF文件第2页浏览型号MAP4KE8.2E3的Datasheet PDF文件第3页浏览型号MAP4KE8.2E3的Datasheet PDF文件第4页浏览型号MAP4KE8.2E3的Datasheet PDF文件第5页浏览型号MAP4KE8.2E3的Datasheet PDF文件第6页 

与MAP4KE8.2E3相关器件

型号 品牌 获取价格 描述 数据表
MAP4KE8.2E3TR MICROSEMI

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Trans Voltage Suppressor Diode, 400W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, DO
MAP4KE8.2TR MICROSEMI

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Trans Voltage Suppressor Diode, 400W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, DO
MAP4KE82 MICROSEMI

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Trans Voltage Suppressor Diode, 400W, 66.4V V(RWM), Unidirectional, 1 Element, Silicon, DO
MAP4KE82A MICROSEMI

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Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
MAP4KE82AE3 MICROSEMI

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Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
MAP4KE82ATR MICROSEMI

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Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
MAP4KE82ATRE3 MICROSEMI

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Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
MAP4KE82C MICROSEMI

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Trans Voltage Suppressor Diode, 400W, 66.4V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MAP4KE82CA MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MAP4KE82CAE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-