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by MAC97/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for use in solid state relays, MPU interface, TTL logic and any other light
industrial or consumer application. Supplied in an inexpensive TO–92 package which
is readily adaptable for use in automatic insertion equipment.
(Device Date Code
9625 and Up)
•
•
One–Piece, Injection–Molded Unibloc Package
Motorola preferred devices
Sensitive Gate Triggering in Four Trigger Modes for all possible Combinations of
Trigger Sources, and Especially for Circuits that Source Gate Drives
All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters
and Reliability
•
TRIACs
0.8 AMPERE RMS
200 — 600 VOLTS
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage
V
DRM
Volts
(1)
(Gate Open, T = –40 to +110°C)
J
1/2 Sine Wave 50 to 60 Hz, Gate Open
MT1
MAC97–4, MAC97A4
MAC97–6, MAC97A6
MAC97–8, MAC97A8
200
400
600
MT2
G
On-State RMS Current
I
0.8
Amp
T(RMS)
Full Cycle Sine Wave 50 to 60 Hz (T = +50°C)
C
Peak Non–repetitive Surge Current
I
8.0
Amps
TSM
(One Full Cycle, 60 Hz, T = 110°C)
A
2
I t
2
A s
Circuit Fusing Considerations
0.26
T
J
= –40 to +110°C (t = 8.3 ms)
Peak Gate Voltage (t
Peak Gate Power (t
2.0 s)
2.0 s)
V
P
5.0
5.0
Volts
Watts
Watt
Amp
°C
GM
MT1
G
GM
MT2
Average Gate Power (T = 80°C, t
8.3 ms)
P
0.1
C
G(AV)
Peak Gate Current (t
2.0 s)
I
1.0
GM
CASE 29–04
TO–226AA, STYLE 12
(TO–92)
Operating Junction Temperature Range
Storage Temperature Range
T
–40 to +110
–40 to +150
J
T
°C
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
75
Unit
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
R
θJC
200
θJA
(1) V
for all types can be applied on a continuous basis. Blocking voltages shall not be
DRM
tested with a constant current source such that the voltage ratings of the devices are
exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
1
Motorola Thyristor Device Data
Motorola, Inc. 1996